Optical and Quantum Electronics

, Volume 31, Issue 12, pp 1235–1246

Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum

  • Zhong-zhe Sun
  • Ding Ding
  • Qian Gong
  • Wei Zhou
  • Bo Xu
  • Zhan-Guo Wang
Article

Abstract

We propose a novel superluminescent diode (SLD) with a quantum dot (QD) active layer, which should give a wider output spectrum than a conventional quantum well SLD. The device makes use of inhomogeneous broadness of gain spectrum resulting from size inhomogeneity of self-assembled quantum dots grown by Stranski– Krastanow mode. Taking a design made out in the InxGa1-xAs/GaAs system for example, the spectrum characteristics of the device are simulated realistically, 100–200 nm full width of half maximum of output spectrum can be obtained. The dependence of the output spectrum on In composition, size distribution and injection current of the dots active region is also elaborated.

quantum dot SLD wide spectrum 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Asada, M., Y. Miyamato and Y. Suematsu. IEEE J. Quantum Electronics QE-22 1915, 1986.Google Scholar
  2. Burns, W.K., C.L. Chen and R.P. Moeller. IEEE/OSA J. Lightwave Technol. LT-1 98, 1983.Google Scholar
  3. Chen, T.R., L. Eng, Y.H. Zhuang, A. Yariv, N.S. Kwong and P.C. Chen. Appl. Phys. Lett. 56 1345, 1990.Google Scholar
  4. Dutta, N.K. and P.P. Deimel. IEEE J. Quantum Electronics QE-19 496, 1983.Google Scholar
  5. Ebiko, Y., S. Muto, D. Suzuki, S. Itoh, K. Shiramine, T. Haga, Y. Nakata and N. Yokoyama. Phys. Rev. Lett. 80 2650, 1998.Google Scholar
  6. Fafard, S., K. Hinzer, S. Raymond, M. Dion, J. McCaffrey, Y. Feng, S. Charbonneau. Science 274 1350, 1996.Google Scholar
  7. Friebele. E.J. and A.D. Kersey. Fiberoptic sensors measure up for smart structure, Laser Focus World 30(5) 165–171, 1994.Google Scholar
  8. Kamath, K., P. Bhattacharya, T. Sosnowski, T. Norris and J. Phillips. Electron. Lett. 32 1374, 1996.Google Scholar
  9. Kirstaedtev, N., N.N. Ledeustov, M. Grundmann, D. Bimberg, V.M. Stinov, S.S. Ruvimov, M.V. Maximov, P.S. Kop'ev, Zh.I. ALferov, U. Richter, P. Werner, U. Gosele and J. Heydenreich. Electron. Lett. 30 1416, 1994.Google Scholar
  10. Kondo, S., H. Yasaka, Y. Noguchi, K. Magari, M. Sugo and O. Mikami. Electron. Lett. 28 132, 1992.Google Scholar
  11. Leon, R., S. Farfard, D. Leonard, J.L. Merz and P.M. Petroff. Appl. Phys. Lett. 67 521, 1995.Google Scholar
  12. Leonard, D., M. Krishnamurthy, C.M. Reaves, S.P. Denbaars and P.M. Petroff. Appl. Phys. Lett. 63 3203, 1993.Google Scholar
  13. Leonard, D., M. Krishnamurthy, S. Fafard, J.M. Merz and P.M. Petroff. J. Vac. Sci. Technol. B. 12 1063, 1994.Google Scholar
  14. Leonard, D., K. Pond and P.M. Petroff. Phys. Rev. B. 50 11687, 1994.Google Scholar
  15. Lin, C.-F., B.-L. Lee and P.-C. Lin. IEEE, Photon. Technol. Lett. 8 1456, 1996.Google Scholar
  16. Lin, C.-F., B.-L. Lee. Appl. Phys. Lett. 71 1598, 1997.Google Scholar
  17. Lobo, C., R. Leon, S. Fafard and P.G. Piva. Appl. Phys. Lett. 72 2850, 1998.Google Scholar
  18. Mikami, O., H. Yasaka and Y. Noguchi. Appl. Phys. Lett. 56 987, 1990.Google Scholar
  19. Mirin, R., A. Gossard and J. Bowers. Electron. Lett. 32 1732, 1996.Google Scholar
  20. Ohnesorge, B., M. Albrecht, J. Oshinowo, A. Forchel and Y. Arakawa. Phys. Rev. B. 54 11532, 1996.Google Scholar
  21. Semenov, A.T., V.R. Shidlovski and S.A. Safin. Electron. Lett. 29 854, 1993.Google Scholar
  22. Semenov, A.T., V.R. Shidlovski, D.A. Jackson, R. Willsch and W. Ecke. Electron. Lett. 32 255, 1996.Google Scholar
  23. Shoji, H., Y. Nakata, K. Mukai, Y. Sugiyama, M. Sugawara, N. Yokayama and H. Ishikawa. Electron. Lett. 32 2023, 1996.Google Scholar
  24. Solomon, G.S., J.A. Trezza, A.F. Marshall and J.S. Harris. Phys. Rev. Lett. 76 952, 1996.Google Scholar
  25. Takada, K., I. Yokohama, K. Chida and J. Noda. Appl. Opt. 26 1603, 1987.Google Scholar
  26. Ustinov, V.M., A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, S.V. Zaitsev, N.Yu. Gordeev, V.I. Kopchatov, N.N. Ledentsov, A.F. Tsatsul'nikov, B.V. Volovik, P.S. Kop'ev, Z.I. Alferov, S.S. Ruvimov, Z. Liliental-Weber and D. Bimberg. Electron. Lett. 34 670, 1998.Google Scholar
  27. Ustinov, V.M., A.Yu. Egorov, A.R. Kovsh, A.E. Zhukov, M.V. Maximov, A.F. Tsatsul'nikov, N.Yu. Gordeev, S.V. Zaitsev, Yu.M. Shernyakov, N.A. Bert, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, J. Böhrer, D. Bimberg, A.O. Kosogov, P. Werner and U. Gösele. J. Cryst. Growth. 175/176, 689, 1997.Google Scholar

Copyright information

© Kluwer Academic Publishers 1999

Authors and Affiliations

  • Zhong-zhe Sun
    • 1
  • Ding Ding
    • 1
  • Qian Gong
    • 1
  • Wei Zhou
    • 1
  • Bo Xu
    • 1
  • Zhan-Guo Wang
    • 1
  1. 1.Laboratory of Semiconductor Materials Science, Institute of SemiconductorsChinese Academy of SciencesBeijingPeople's Republic of China

Personalised recommendations