Journal of Materials Science Letters

, Volume 19, Issue 9, pp 817–821

Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown

  • C. L. Cha
  • E. F. Chor
  • H. Gong
  • L. Chan
Article

DOI: 10.1023/A:1006745528344

Cite this article as:
Cha, C.L., Chor, E.F., Gong, H. et al. Journal of Materials Science Letters (2000) 19: 817. doi:10.1023/A:1006745528344

Copyright information

© Kluwer Academic Publishers 2000

Authors and Affiliations

  • C. L. Cha
    • 1
  • E. F. Chor
    • 2
  • H. Gong
    • 2
  • L. Chan
    • 3
  1. 1.Center For Optoelectronics, Department of Electrical EngineeringNational University of SingaporeSingapore
  2. 2.Center For Optoelectronics, Department of Electrical EngineeringNational University of SingaporeSingapore
  3. 3.Research and Development DepartmentChartered Semiconductor Manufacturing Ltd.Singapore

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