Journal of Materials Science

, Volume 35, Issue 12, pp 3037–3042 | Cite as

Microstructure, electrical properties, and degradation behavior of praseodymium oxides-based zinc oxide varistors doped with Y2O3

  • Choon-Woo Nahm
  • Choon-Hyun Park


The microstructure, electrical properties, and degradation behavior of Pr-based zinc oxide varistors, which are composed of Zn-Pr-Co-Cr-Y oxides were investigated according to Y2O3 additive content in the range 0.5–4.0 mol%. The majority of the Sadded Y2O3 were segregated at the multiple ZnO grain junctions and grain boundaries. The average grain size was markedly decreased in the range 27.3–8.6 μm with increasing Y2O3 additive content. Y2O3 acted as an inhibitor of grain growth. Additions of Y2O3 increased the varistor voltage in the range 36.90–686.58 V/mm, increased the nonlinear exponent in the range 3.75–87.42, decreased the leakage current in the range 115.48–0.047μA, increased the barrier height in the range 1.06–2.16 eV, and decreased the donor concentration in the rang 1.87 × 1018–0.19 × 1018 cm−3. Y2O3 acted as an acceptor, as a result of the decrease of donor concentration. All Pr-based ZnO varistors doped with Y2O3 exhibited very predominant degradation characteristics, which show a nearly symmetric I-V after the stress. In particular, since 4.0 mol% Y2O3-added ZnO varistor has not only very excellent non-ohmicity, but also very stable degradation behavior, it is estimated to be sufficiently used to various application fields.


Grain Size Microstructure Zinc Electrical Property Y2O3 
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  1. 1.
    M. Matsuoka, Jpn. J. Appl. Phys. 10 (1971) 736.Google Scholar
  2. 2.
    L. M. Levinson and H. R. Philipp, Am. Ceram. Soc. Bull. 65 (1986) 639.Google Scholar
  3. 3.
    T. K. Gupta, J. Am. Ceram. Soc. 73 (1990) 1817.Google Scholar
  4. 4.
    L. K. J. Vanadamme and J. C. Brugman, J. Appl. Phys. 51 (1980) 4240.Google Scholar
  5. 5.
    S.-N. Bai and T.-Y. Tseng, Jpn. J. Appl. Phys. 31 (1992) 81.Google Scholar
  6. 6.
    L. M. Levinson and H. R. Philipp, J. Appl. Phys. 46 (1975) 1332.Google Scholar
  7. 7.
    M. Fix and J. Soln, Appl. Phys. Lett. 26 (1075) 519.Google Scholar
  8. 8.
    P. R. Emtage, J. Appl. Phys. 48 (1977) 4372.Google Scholar
  9. 9.
    K. Eda, ibid. 49 (1978) 2964.Google Scholar
  10. 10.
    G. D. Mahan, L. M. Levinson and H. R. Philipp, ibid. 50 (1979) 2799.Google Scholar
  11. 11.
    J. Wong, ibid. 46 (1975) 1653.Google Scholar
  12. 12.
    M. Inada, Jpn. J. Appl. Phys. 17 (1978) 1.Google Scholar
  13. 13.
    Idem., ibid. 17 (1978) 673.Google Scholar
  14. 14.
    C.-Y. Shen, Y.-C. Chen and L. Wu, ibid. 32 (1993) 2043.Google Scholar
  15. 15.
    J. Fan and R. Freer, J. Appl. Phys. 77 (1995) 4795.Google Scholar
  16. 16.
    T. R. Kutty and S. Ezhilvalavan, Jpn. J. Appl. Phys. 34 (1995) 6125.Google Scholar
  17. 17.
    S. A. Pianaro, E. C. Pereira, L. O. S. Bulhoes, E. Longe and J. A. Varela, J. Mat. Sci. 30 (1995) 133.Google Scholar
  18. 18.
    T. K. Gupta and W. G. Carlson, ibid. 20 (1985) 3487.Google Scholar
  19. 19.
    Y.-S. Lee and T.-Y. Tseng, J. Am. Ceram. Soc. 75 (1992) 1636.Google Scholar
  20. 20.
    J. Fan and R. Freer, J. Mat. Sci. 28 (1993) 1391.Google Scholar
  21. 21.
    C.-S. Chen, C.-T. Kuo and I.-N. Lin, J. Mat. Res. 13 (1998) 1560.Google Scholar
  22. 22.
    A. B. Alles and V. L. Burdick, J. Appl. Phys. 70 (1991) 6883.Google Scholar
  23. 23.
    A. B. Alles, R. Puskas, G. Callahan and V. L. Burdick, J. Am. Ceram. Soc. 76 (1993) 2098.Google Scholar
  24. 24.
    Y.-S. Lee, K.-S. Liao and T.-Y. Tseng, ibid. 79 (1996) 2379.Google Scholar
  25. 25.
    M. Mukae, K. Tsuda and I. Nagasawa, J. Appl. Pshys. 50 (1979) 4475.Google Scholar
  26. 26.
    S. M. Sze, in “Physics of Semiconductor Devices” (John Wiley and Sons, New York, 1981) p. 402.Google Scholar
  27. 27.
    J. C. Wurst and J. A. Nelson, J. Am. Ceram. Soc. 97–12 (1972) 109.Google Scholar

Copyright information

© Kluwer Academic Publishers 2000

Authors and Affiliations

  • Choon-Woo Nahm
    • 1
  • Choon-Hyun Park
    • 2
  1. 1.Department of Electrical EngineeringDongeui UniversityPusanKorea
  2. 2.Department of Electrical EngineeringDongeui UniversityPusanKorea

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