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Journal of Low Temperature Physics

, Volume 118, Issue 5–6, pp 333–342 | Cite as

In-plane Gate Single Electron Transistor Fabricated by AFM Lithography

  • S. Lüscher
  • A. Fuhrer
  • R. Held
  • T. Heinzel
  • K. Ensslin
  • W. Wegscheider
  • M. Bichler
Article

Abstract

Coulomb blockade is observed in semiconductor quantum dotsfabricated by scanning probe lithography. We demonstrate thatby combining top gates with in-plane gates, the lithographicshape of a dot can be transferred into the electron gas withhigh accuracy. Furthermore, by applying voltages to the in-plane gates, the number of electrons on the dot can be changedby more than 70 without changing its shape. Transportmeasurements in high magnetic fields and with positive topgate voltages applied indicate that the potential walls of thenanostructure can be made very steep.

Keywords

Magnetic Field Magnetic Material High Magnetic Field Single Electron Scanning Probe 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Publishing Corporation 2000

Authors and Affiliations

  • S. Lüscher
    • 1
  • A. Fuhrer
    • 1
  • R. Held
    • 1
  • T. Heinzel
    • 1
  • K. Ensslin
    • 1
  • W. Wegscheider
    • 2
    • 3
  • M. Bichler
    • 2
  1. 1.Solid State Physics LaboratoryETH ZürichZürichSwitzerland
  2. 2.Walter Schottky InstitutTU MünchenGarchingGermany
  3. 3.Institut für Angewandte und Experimentelle PhysikUniversität RegensburgRegensburg

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