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Molecular Dynamics Simulation on Hydrogen Ion Implantation Process in Smart-Cut Technology

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Abstract

The hydrogen ion implantation process in Smart-Cut technology is investigated in the present paper using molecular dynamics (MD) simulations. This work focuses on the effects of the implantation energy, dose of hydrogen ions and implantation temperature on the distribution of hydrogen ions and defect rate induced by ion implantation. Numerical analysis shows that implanted hydrogen ions follow an approximate Gaussian distribution which mainly depends on the implantation energy and is independent of the hydrogen ion dose and implantation temperature. By introducing a new parameter of defect rate, the influence of the processing parameters on defect rate is also quantitatively examined.

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Authors and Affiliations

  1. School of Manufacturing Science and Engineering, Southwest University of Science and Technology, 621010, Mianyang, China

    Bing Wang & Bin Gu

  2. School of Civil Engineering and Architecture, Hainan University, 570228, Haikou, China

    Hongbin Zhang

  3. Institute of Biomechanics and Medical Engineering, Department of Engineering Mechanics, Tsinghua University, 100084, Beijing, China

    Xiqiao Feng

Authors
  1. Bing Wang
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  2. Bin Gu
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  3. Hongbin Zhang
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  4. Xiqiao Feng
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Corresponding author

Correspondence to Bin Gu.

Additional information

Project supported by the National Natural Science Foundation of China (No. 11372261), the Excellent Young Scientists Supporting Project of Science and Technology Department of Sichuan Province (No. 2013JQ0030), the Supporting Project of Department of Education of Sichuan Province (No. 2014zd3132), the Opening Project of Key Laboratory of Testing Technology for Manufacturing Process, Southwest University of Science and Technology-Ministry of Education (No. 12zxzk02), the Fund of Doctoral Research of Southwest University of Science and Technology (No. 12zx7106) and the Postgraduate Innovation Fund Project of Southwest University of Science and Technology (No. 14ycxjj0121).

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Wang, B., Gu, B., Zhang, H. et al. Molecular Dynamics Simulation on Hydrogen Ion Implantation Process in Smart-Cut Technology. Acta Mech. Solida Sin. 29, 111–119 (2016). https://doi.org/10.1016/S0894-9166(16)30100-8

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  • DOI: https://doi.org/10.1016/S0894-9166(16)30100-8

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