Abstract
ZnSb, a promising thermoelectric material, has traditionally been fabricated using a high-temperature sintering process. In the present study, we developed a compaction technology that eliminates the need for sintering, aiming to establish a more efficient fabrication for the ZnSb-based bulks. The thermoelectric properties of Mn-doped ZnSb samples (Zn1-xMnxSb, x = 0, 0.0025, 0.0050, 0.0075, 0.010) fabricated by the compaction technology were evaluated through their electronic and thermal transport properties over a temperature range of 50 to 200 °C. Both pristine ZnSb and Mn-doped ZnSbs exhibited p-type conduction behavior. The electrical conductivity of ZnSb was significantly enhanced by doping of 0.75 at% Mn at Zn-site mainly due to the improved carrier mobility, which leads to large power factor enhancement to 0.089 mW/mK2 for 0.75 at% Mn-doped ZnSb. Consequently, more than 300% enhancement in the dimensionless figure-of-merit (zT) with a peak zT value of 0.08 was achieved in 0.75 at% Mn-doped ZnSb at 473 K.
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Acknowledgements
This research was supported by the National Research Foundation of Korea (NRF) funded by the Korean government. (Ministry of Science and ICT(MSIT)) (No. 2022M3H4A1A04076667, No. RS-2023-00236572). The Department of Materials Science and Engineering was supported through the Research-Focused Department Promotion & Interdisciplinary Convergence Research Project as a part of the Support Program for University Development for Dankook University in 2023.
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Jin, Z.D., Pi, J.H., Park, O. et al. Thermoelectric properties of Mn-doped ZnSbs fabricated without sintering process. J. Korean Ceram. Soc. 61, 492–499 (2024). https://doi.org/10.1007/s43207-024-00377-x
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DOI: https://doi.org/10.1007/s43207-024-00377-x