Abstract
Here, we introduce interface control of polycrystalline silicon (poly-Si) using reduced graphene oxide (RGO) as a promising way to minimize the grain boundary scattering for the enhancement of the charge transport properties in poly-Si. In this experiment, Si powder was prepared by pulverizing an As-doped Si wafer using high-energy ball milling. The Si powder was coated with RGO, and the composite was consolidated by spark plasma sintering. The interface-controlled Si (Si–RGO) composite exhibited significantly enhanced charge transport properties compared with bulk poly-Si. The release of trapped electrons through interface control using RGO reduced the grain boundary barrier height and resulted in a negative temperature dependence of the mobility in the Si–RGO composite. Consequently, the mobility and carrier concentration of the Si–RGO composite were simultaneously enhanced through interface control using RGO.
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Acknowledgements
This work was supported by the Korea Institute for Advancement of Technology (KIAT) through the Competency Development Program for Industry Specialist (P0012451) by Ministry of Trade, Industry and Energy, Republic of Korea, and also supported by the Basic Science Research Program (2019R1F1A1059591) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology, Republic of Korea. It also was supported by the Korea Institute of Ceramic Engineering and Technology (KPP19001).
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Nam, W.H., Sun, J.H., Lee, H.W. et al. Significantly enhanced charge transport in polysilicon by alleviating grain boundary scattering through interface control using reduced graphene oxide. J. Korean Ceram. Soc. 59, 263–269 (2022). https://doi.org/10.1007/s43207-021-00155-z
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DOI: https://doi.org/10.1007/s43207-021-00155-z