Layered metal chalcogenides with highly promising thermoelectric properties have attracted attention owing to their intrinsically low thermal conductivity, which originates from their unique layered structure and van der Waals bonding. InSe, a post-transition metal chalcogenide, also has layered atomic structure and low thermal conductivity. We investigate the effects of S doping of Si-doped InSe, In0.9Si0.1Se. The S-doped In0.9Si0.1Se exhibits enhanced thermoelectric properties, with a higher power factor and lower thermal conductivity compared to Si-doped InSe. A significant increase in carrier mobility has an overall positive effect on the electronic transport properties, resulting in a systematic increase in power factor from 0.05 to 0.15 mW/mK2 with S doping. In addition, the thermal conductivity systematically decreases with S doping owing to additional point-defect scattering. Because of the higher power factor and lower thermal conductivity, the thermoelectric figure of merit of the In0.9Si0.1Se0.9S0.1 sample at 735 K was 0.18, which is 3.6 times that of In0.9Si0.1Se.
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This work was supported by the Basic Study and Interdisciplinary R&D Foundation Fund of the University of Seoul (2020) for Sang-il Kim and by the National Research Foundation of Korea (NRF- 2021R1C1C1006147) for TaeWan Kim.
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Kim, D.H., Kim, HS., Rahman, J.U. et al. Thermoelectric transport properties of S-doped In0.9Si0.1Se. J. Korean Ceram. Soc. (2021). https://doi.org/10.1007/s43207-021-00153-1
- Metal chalcogenides
- Anion doping