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Design and Performance Analysis of Normally -Off Extended Gate (AlGa)2O3/Ga2O3 High Electron Mobility Transistor

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Abstract

Gallium oxide (Ga2O3) based HEMTs have emerged as a optimistic technology for high-power and - frequency usage. Ga2O3 is a wide bandgap semiconductor with attractive properties such as a large bandgap, high breakdown voltage, and high electron mobility. Ga2O3 -based HEMTs utilize a heterostructure design, where a Ga2O3 layer serves as the channel material. The proposed device architecture has been designed and simulated with Silvaco- Atlas. The HEMT employs Ga2O3 as a substrate wih Ga2O3 buffer layer and Al2O3 as dielectric providing insulation to (AlGa)2O3 layer and the gate contacts and also improving the breakdown voltage of the device The optimization process involves considering different gate and varying the work function at gate which results in Threshold Voltage, Transconductance, better switching speeds, reduction in parasitics and power consumption and overall efficiency of the device. It is observed that the proposed device results in better a Ion/Ioff ratio of 8.92*1010 and Threshold Voltage of 2.4 V and Ion value of 0.00012 A/µm. The breakdown Voltage of the device has been found to be 236 V and output power density of 2.92 KW resulting the device to work at high voltage and high-power applications.

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  1. ECE Department, NIT Jalandhar, Jalandhar, Punjab, 144011, India

    Ashish Raman, Suryansh Raheja & Ravi Ranjan

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  1. Ashish Raman
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  2. Suryansh Raheja
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Contributions

Suryansh Raheja: Simulation, TCAD Software, Writing- Original draft preparation. Ashish Raman: TCAD Software, Writing- Original draft preparation. Ravi Ranjan: Simulation, Data curation and Revision, Logical-Methodology, conceptualization

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Correspondence to Ravi Ranjan.

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Raman, A., Raheja, S. & Ranjan, R. Design and Performance Analysis of Normally -Off Extended Gate (AlGa)2O3/Ga2O3 High Electron Mobility Transistor. Trans. Electr. Electron. Mater. (2024). https://doi.org/10.1007/s42341-024-00537-0

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  • DOI: https://doi.org/10.1007/s42341-024-00537-0

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