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Approaches to Improve Mobility and Stability of IGZO TFTs: A Brief Review

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Among metal oxide material TFTs, IGZO TFTs are highly regarded for their exceptionally high mobility, exceeding 10 cm²/V·s, remarkable transparency of more than 80%, and their adaptable low-temperature fabrication techniques. High-performance displays operating at refresh rates of up to 144 Hz and undergoing millions of device switches demand IGZO TFTs with mobility exceeding 20 cm²/V·s and higher stability against impulse stress. The effect of IGZO material composition on device stability and recent strategies to promote the mobility and stability of IGZO TFT by modifying the transistor structure, preparation process, and post-processing techniques to reduce VO have been discussed. The paper describes the application of IGZO TFTs in flexible electronics.

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This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. NRF-2022R1A4A1028702). This work was also supported by the Technology Innovation Program (or Industrial Strategic Technology Development Program) (RS-2023-00266568) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).

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Correspondence to Duy Phong Pham or Junsin Yi.

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Pan, Z., Hu, Y., Chen, J. et al. Approaches to Improve Mobility and Stability of IGZO TFTs: A Brief Review. Trans. Electr. Electron. Mater. (2024).

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