Abstract
The present study of the structural and electrical properties of chalcogenide especially un doped, Ag and Cu dopedCd0.75Se0.25 bulk material. Chalcogenide-materials and II-VI group semiconductors have been found as useful materials for application in the huge span of semiconductor’s electronics and optoelectronics. The Electrical properties have been discussed for bulk material. Bulk material formation from Melt-quenching technique is more useful for thin film formation. XRD, Table top Hall Effect, Four Probe measurements and SEM results are described in this paper. Through these characterization, optimizing the resistivity, conductivity, type of semiconductor and mobility of the Cd0.75Se0.25 balk material. It has also been found that quantum confinement is exhibited in this type of semiconductor at nanoscale.
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Acknowledgements
Authors are grateful to ACMS IIT Kanpur, U.P., M.M.M.U.T. Gorakhpur, U.P. & IIT Indore, M.P. India for Electrical and structural characterization. Also thankful to Rajnish Raj & Surbhi Agrawal for his/her kind support.
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DKS Original draft writing, methodology, conceptualization, software work, AS Supervision, DKD reviewing, editing and SS revising the manuscript.
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Singh, D.K., Srivastava, A., Singh, S. et al. Study of Structural and Electrical Characterization of Doped and Undoped Cd0.75Se0.25 Bulk Material for Solar Cell Application. Trans. Electr. Electron. Mater. 25, 356–364 (2024). https://doi.org/10.1007/s42341-024-00518-3
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DOI: https://doi.org/10.1007/s42341-024-00518-3