Abstract
In this paper, we studied the post-treatment effect in order to optimize the optical and electrical properties of the IZO transparent conductive oxide (TCO). We used the rapid thermal annealing (RTA) process, which provides direct thermal energy, and the micro-wave treatment (MWT) process, which provides vibrational energy of particles among the various methods. The sheet resistance and transparency were investigated in order to comparatively evaluate their electrical and optical characteristics. First, the RTA process shows a sharp increase in sheet resistance, which is due to thermal damage, as a result of sheet resistance, whereas the MWT process shows a stable change in sheet resistance with low resistance values, which are in a range of 17.73–33.95 Ω/□. The sheet resistance of the IZO film after MWT was improved by approximately 47% compared to the IZO film after RTA. The transmittance after both the RTA and the MWT was then similarly observed to be 70% over in the visible light region of 400–700. This result therefore indicates that the MWT process does not cause thermal damage to the IZO films, and it provides excellent electrical and optical characteristics.
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All data generated or analyzed during this study are included in this published article, and the datasets used and detailed analyzed reports during the current study are available from the corresponding author on reasonable request.
References
N. Taga, M. Maekawa, Y. Shigesato, I. Yasui, M. Kamei, T.E. Haynes, “Deposition of heteroepitaxial in 2O3 thin films by molecular beam epitaxy. Jpn. J. Appl. Phys. 37, 6524–6529 (1998)
C. Nunes, A.M. de Carvalho, Botelho do Rego, A Amaral, P Brogueira and G Lavareda, Effect of substrate temperature on the surface structure, composition and morphology of indium–tin oxide films. Surf. Coat. Technol. 124, 70–75 (2000)
A.A. Serkov et al., Laser sintering of gravure printed indium tin oxide films on polyethylene terephthalate for flexible electronics. Sci. Rep. 9(1), 1773 (2019)
O. Malik, F.J. de la Hidalga-Wade, Sputtered indium tin oxide films for optoelectronic applications. Optoelectron.-Adv. Device Struct. 4, 297–314 (2017)
K. Maki, N. Komiya, A. Suzuki, Fabrication of thin films of ITO by aerosol CVD. Thin Solid Films 445(2), 224–228 (2003)
Y. Mika et al., Characteristics of indium tin oxide thin films prepared using electron beam evaporation. Thin solid films 447, 115–118 (2004)
G. Yun et al., Preparation of ITO films using a spray pyrolysis solution containing an acetylacetone chelating agent. Mater. Sci. -Poland 32, 66–70 (2014)
G. Amit Kumar et al., Magnetron configurations dependent surface properties of SnO2 thin films deposited by sputtering process. Vacuum 177, 109353 (2020)
Djurišić Aleksandra B et al., ZnO nanostructures: growth, properties and applications. J. Mater. Chem. 22(14), 6526–6535 (2012)
M.K. Ryu et al., High performance thin film transistor with cos puttered amorphous Zn–In–Sn–O channel: combinatorial approach. Appl. Phys. Lett. 95(7), 072104 (2009)
Y.-H. Chiang et al., The utilization of IZO transparent conductive oxide for tandem and substrate type perovskite solar cells. J. Phys. D Appl. Phys. 51(42), 424002 (2018)
V. Sittinger et al., Indium-based transparent conductive oxides developed for perovskite and perovskite-silicon tandem solar cell applications. Surf. Coat. Technol. 457, 129286 (2023)
H.J. Kim, J. Jung, H.J. Kim, Enhancement of electrical characteristics and stability of self-patterned In–Zn–O thin-film transistors based on photosensitive precursors. Sci. Rep. 10(1), 18853 (2020)
P. Wang, H. Yang, J. Li, X. Zhang, L. Wang, J. Xiao, L. Lu, Synergistically enhanced performance and reliability of abrupt metal-oxide heterojunction transistor. Adv. Electron. Mater. 9(1), 2200807 (2023)
J. Park, D. Huh, S. Son, W. Kim, S. Ju, H. Lee, Transparent, flexible, and low-operating-voltage resistive switching memory based on Al2O3/IZO Multilayer. Global Chall. 6(7), 2100118 (2022)
V.L. Patil, D.S. Dalavi, S.B. Dhavale, S.A. Vanalakar, N.L. Tarwal, A.S. Kalekar, P.S. Patil, Indium doped ZnO nanorods for chemiresistive NO 2 gas sensors. New J. Chem. 46(16), 7588–7597 (2022)
N. Liu, L.Q. Zhu, P. Feng, C.J. Wan, Y.H. Liu, Y. Shi, Q. Wan, Flexible sensory platform based on oxide-based neuromorphic transistors. Sci. Rep. 5(1), 18082 (2015)
G. Gonçalves et al., Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films. Thin solid films 515(24), 8562–8566 (2007)
P. Barquinha et al., Effect of annealing temperature on the properties of IZO films and IZO based transparent TFTs. Thin Solid Films 515(24), 8450–8454 (2007)
T. Pi, D. Xiao, H. Yang, G. He, X. Wu, W. Liu et al., High-performance a-IGZO TFT fabricated with ultralow thermal budget via microwave annealing. IEEE Trans. Electron Devices 69(1), 156–159 (2022)
M. Chae et al., Improved electrical and optical properties of IGZO transparent conductive oxide due to microwave treatment: application to silicon solar cells. IEEE Access 10, 90401–90407 (2022)
M.S. Kang, W.J. Cho, Effect of microwave irradiation power on resistive switching performance in solution-processed aluminum oxide resistive memory. J. Phys. Chem. Solids 123, 52–58 (2018)
F. Shan, J.Y. Lee, H.L. Zhao, S.G. Choi, J.H. Koh, S.J. Kim, Multi-stacking indium zinc oxide thin-film transistors post-annealed by femtosecond laser. Electron. Mater. Lett. 17(5), 451–458 (2021)
H.L. Zhao, G. Tarsoly, F. Shan, X.L. Wang, J.Y. Lee, Y.J. Jeong, S.J. Kim, Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors. Sci. Rep. 12(1), 19497 (2022)
B.D. Viezbicke, S. Patel, B.E. Davis, D.P. Birnie III., Evaluation of the Tauc method for optical absorption edge determination: ZnO thin films as a model system. Phys. Status Solidi (b) 252(8), 1700–1710 (2015)
R. Raciti et al., Optical bandgap of semiconductor nanostructures: methods for experimental data analysis. J. Appl. Phys. 121(23), 234304 (2017)
K.G. Saw et al., New insights on the burstein-moss shift and band gap narrowing in indium-doped zinc oxide thin films. PloS one 10(10), e0141180 (2015)
D. Lee, A. Lee, H.D. Kim, IZO/ITO double-layered transparent conductive oxide for silicon heterojunction solar cells. IEEE Access 10, 77170–77175 (2022)
Funding
This research was supported by Basic Science Research Program through the National Research Foundation of Korea(NRF) funded by the Ministry of Education (NRF-2021R1A6A3A01086866, NRF-2022R1F1A1060655), the Nano-Material Technology Development Program, NRF, Ministry of Science, ICT, and Future Planning (2009–0082580), and in part by the Korea Institute for Advancement of Technology (KIAT) grant funded by the Korea Government (MOTIE) via the Competency Development Program for Industry Specialist under grant P0020966.
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Conceptualization: H-DK; Formal analysis and investigation: JJ, DL, and MC; Writing—original draft preparation: JJ and MC; Writing—review and editing: DL and H-DK; Funding acquisition: H-DK; Resources: MC; Supervision: H-DK.
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Jung, J., Lee, D., Chae, M. et al. Influence on Post-treatment Process on Optical and Electrical Properties of IZO Thin Films. Trans. Electr. Electron. Mater. (2024). https://doi.org/10.1007/s42341-024-00517-4
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DOI: https://doi.org/10.1007/s42341-024-00517-4