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Enhancing GaN/AlGaN MQW Micro LED Optical and Electrical Performance with a Non-uniform LQB

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Abstract

In this work, physical device modeling of ultraviolet micro light-emitting diodes (UV-µLEDs) based on GaN/AlGaN multiple quantum wells (MQWs) is presented. We numerically investigated the optical and electrical properties of UV-LEDs with a graded last quantum barrier (LQB). The constant content Aluminium (Al) of the LQB is replaced by a graded Al profile to improve the internal quantum efficiency (IQE) in the active MQWs region. The results show that the internal quantum efficiency (IQE) and radiative recombination rate of UV µLEDs with the last linearly increased Al composition LQB are higher than other samples under 90 A/cm2 current. This composition also contributes to enhanced hole injection efficiency, effective electron confinement, and uniform distribution of carriers in the MQWs caused by the low electrostatic field. As a result, the optical output power is increased 1.94 times, and the spontaneous emission intensity 2.37 times. The simulated results indicate that the LQB AlGaN layer with different compositions of Al modification can mitigate the effect of the effective electron confinement, Auger recombination rate and hole injection, increasing the overlap between electron ditribution profiles.

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Authors and Affiliations

  1. Laboratory of Metallic and Semiconducting Materials (LMSM), University of Biskra, 07000, Biskra, Algeria

    Hassani Mohamed, Nouredine Sengouga & Afak Meftah

  2. Departement of Electrical Engineering, University of Biskra, 07000, Biskra, Algeria

    Hassani Mohamed

  3. Departement of Materials Science, University of Biskra, 07000, Biskra, Algeria

    Nouredine Sengouga & Afak Meftah

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  1. Hassani Mohamed
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Mohamed, H., Sengouga, N. & Meftah, A. Enhancing GaN/AlGaN MQW Micro LED Optical and Electrical Performance with a Non-uniform LQB. Trans. Electr. Electron. Mater. 24, 469–478 (2023). https://doi.org/10.1007/s42341-023-00467-3

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