Abstract
The demand for Point of Care Testing instruments in real-time applications is rapidly increasing, and semiconducting material-based potentiometric devices are being considered for use in the development of next-generation biosensors. Our research focused on the Tunnel Field Effect Transistor (TFET) device as it has the potential to overcome the performance limitations caused by short channel effects in conventional FET biosensors. To achieve label-free detection of target biomolecules, we conducted a thorough investigation of junction-less and doping-less TFET-based biosensors. Compared to junction-based TFET biosensors, the junction-less TFET device improves subthreshold performance and eliminates the problem of excessive leakage current, leading to increased device sensitivity. Our analysis covers the history and design methodology of junction-less TFETs, starting with the first device and progressing to the most recent designs. We identified the most significant components of the design approach and compared performance metrics such as subthreshold sensitivity, \(I_{ON}/I_{OFF}\), on current \((I_{ON}\)), and device sensitivity.
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Bitra, J., Komanapalli, G. A Comprehensive Performance Investigation on Junction-Less TFET (JL-TFET) Based Biosensor: Device Structure and Sensitivity. Trans. Electr. Electron. Mater. 24, 365–372 (2023). https://doi.org/10.1007/s42341-023-00465-5
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DOI: https://doi.org/10.1007/s42341-023-00465-5