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Liquid Phase Exfoliation and Characterization of Few Layer MoS2 and WS2 Nanosheets as Channel Material in Field Effect Transistor

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Abstract

Field effect transistors (FETs) are considered as the backbone of electronic industry. In this study, we adopted a simple drop cast method for the fabrication of MoS2 and WS2 channel based FET on commercially available pre-patterned OFET devices. The synthesis of few-layers thick MoS2 and WS2 nanosheets (NSs) has been done by solvent-assisted exfoliation method. FESEM and TEM study reveals that NSs have lateral dimensions in micron and have polycrystalline nature. From XPS, it is observed that MoS2 NSs has 2H phase whereas WS2 have hybrid 1T and 2H phase. The frequency difference in Raman vibrational mode for MoS2 and WS2 NSs is 24.08 cm−1 and 63.84 cm−1 respectively, confirms that number of layers is reduced after sonication. UV–visible spectroscopy reveals that the bandgap is 1.7 eV and 1.8 eV for MoS2 and WS2 NSs respectively. Later, these nanosheets have been drop-casted as the channel material on pre-patterned FETs devices and their output and transfer characteristics have been studied. It found that the current On/Off ratio is 104 and 103 for MoS2 and WS2-FET device respectively. This facile fabrication of FET devices may provide a new stage for researchers who do not have access of lithography facilities for FET fabrication.

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Data Availability

The datasets used and/or analyzed during the current study are available from the corresponding author on reasonable request.

References

  1. T.J. Echtermeyer, M.C. Lemme, M. Baus, B.N. Szafranek, A.K. Geim, H. Kurz, IEEE Electron Device Lett. 29, 952 (2008)

    Article  CAS  Google Scholar 

  2. W. Choi, N. Choudhary, G.H. Han, J. Park, D. Akinwande, Y.H. Lee, Mater. Today 20, 116–130 (2017)

    Article  CAS  Google Scholar 

  3. X.R. Wang, Y. Shi, R. Zhang, Chin. Phys. B 22, 098505 (2013)

    Article  Google Scholar 

  4. M. Houssa, A. Dimoulas, A. Molle, 2D Materials for Nanoelectronics (CRC Press, Boca Raton, 2016)

    Book  Google Scholar 

  5. T. Han, H. Liu, S. Chen, S. Wang, K. Yang, Micromachines 12, 1006 (2021)

    Article  Google Scholar 

  6. K. Kuhn, CMOS and Beyond CMOS: Scaling Challenges (Elsevier Ltd., Amsterdam, 2018)

    Google Scholar 

  7. S. Bertolazzi, J. Brivio, A. Kis, ACS Nano 5, 9703 (2011)

    Article  CAS  Google Scholar 

  8. K.F. Mak, C. Lee, J. Hone, J. Shan, T.F. Heinz, Phys. Rev. Lett. 105, 136805 (2010)

    Article  Google Scholar 

  9. R. Bhatt, S. Bhattacharya, R. Basu, M. Patel, A. Singh, P. Bhatt, D.K. Aswal, S.K. Gupta, AIP Conf. Proc. 1536, 881 (2013)

    Article  CAS  Google Scholar 

  10. R. Sharma, A. Kumar, R. Kumari, P. Garg, G. Umapathy, R. Laisharm, S. Ojha, R. Srivastava, O.P. Sinha, ChemistrySelect 6, 11285 (2021)

    Article  CAS  Google Scholar 

  11. H.S.S. Ramakrishna Matte, A. Gomathi, A.K. Manna, D.J. Late, R. Datta, S.K. Pati, C.N.R. Rao, Angew. Chem. Int. Ed. 49, 4059 (2010)

    Article  Google Scholar 

  12. A. Kumar, R. Sharma, S. Yadav, S.K. Swami, R. Kumari, V.N. Singh, S. Ojha, J.J. Schneider, R. Srivastava, O.P. Sinha, Dalton Trans. 50, 3894 (2021)

    Article  CAS  Google Scholar 

  13. H. Lin, X. Chen, H. Li, M. Yang, Y. Qi, Mater. Lett. 64, 1748 (2010)

    Article  CAS  Google Scholar 

  14. J.G. Song, J. Park, W. Lee, T. Choi, H. Jung, C.W. Lee, S.H. Hwang, J.M. Myoung, J.H. Jung, S.H. Kim, C. Lansalot-Matras, H. Kim, ACS Nano 7, 11333 (2013)

    Article  CAS  Google Scholar 

  15. S. Das, M. Kim, J.W. Lee, W. Choi, Crit. Rev. Solid State Mater. Sci. 39, 231 (2014)

    Article  CAS  Google Scholar 

  16. W. Zhao, R.M. Ribeiro, M. Toh, A. Carvalho, C. Kloc, C. Neto, G. Eda, Appl. Mater. Today 1, 60 (2015)

    Article  Google Scholar 

  17. J.L. Sina Najmaei, Z. Liu, W. Zhou, X. Zou, G. Shi, S. Lei, B.I. Yakobson, J.-C. Idrobo, P.M. Ajayan, Chem. Mater. Mater. 26, 6371 (2014)

    Article  Google Scholar 

  18. G. Liu, H. Ma, I. Teixeira, Z. Sun, Q. Xia, X. Hong, S.C.E. Tsang, Chem. Eur. J. 22, 2910 (2016)

    Article  CAS  Google Scholar 

  19. X. Fan, P. Xu, D. Zhou, Y. Sun, Y.C. Li, A.M. Nguyen, M. Terrones, T.E. Mallouk, Nano Lett. 15, 5956 (2015)

    Article  CAS  Google Scholar 

  20. V. Forsberg, R. Zhang, J. Bäckström, C. Dahlström, B. Andres, M. Norgren, M. Andersson, M. Hummelgård, H. Olin, PLoS ONE 11, e0154522 (2016)

    Article  Google Scholar 

  21. A. Sebastian, R. Pendurthi, T.H. Choudhury, J.M. Redwing, S. Das, Nat. Commun. 12, 1 (2021)

    Article  Google Scholar 

  22. D. Jariwala, V.K. Sangwan, L.J. Lauhon, T.J. Marks, M.C. Hersam, ACS Nano 8, 1102 (2014)

    Article  CAS  Google Scholar 

  23. Y. Zhang, Y. Zhang, Q. Ji, J. Ju, H. Yuan, J. Shi, T. Gao, D. Ma, M. Liu, Y. Chen, X. Song, H.Y. Hwang, Y. Cui, Z. Liu, ACS Nano 7, 8963 (2013)

    Article  CAS  Google Scholar 

  24. W. Zhang, J.K. Huang, C.H. Chen, Y.H. Chang, Y.J. Cheng, L.J. Li, Adv. Mater. 25, 3456 (2013)

    Article  CAS  Google Scholar 

  25. S. Kim, A. Konar, W. Hwang, J.H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. Yoo, J. Choi, Y.W. Jin, S.Y. Lee, D. Jena, W. Choi, K. Kim, Nat. Commun. 3, 1 (2012)

    Google Scholar 

  26. J.S. Kim, H.W. Yoo, H.O. Choi, H.T. Jung, Nano Lett. 14, 5941 (2014)

    Article  CAS  Google Scholar 

  27. Z. Jia, J. Xiang, F. Wen, R. Yang, C. Hao, Z. Liu, ACS Appl. Mater. Interfaces 8, 4781 (2016)

    Article  CAS  Google Scholar 

  28. J. Zhao, H. Yu, W. Chen, R. Yang, J. Zhu, M. Liao, D. Shi, G. Zhang, ACS Appl. Mater. Interfaces 8, 16546 (2016)

    Article  CAS  Google Scholar 

  29. D. Ovchinnikov, A. Allain, Y. Huang, D. Dumcenco, ACS Nano 8, 8174 (2014)

    Article  CAS  Google Scholar 

  30. J. Liang, K. Xu, B. Toncini, B. Bersch, B. Jariwala, Y.C. Lin, J. Robinson, S.K. Fullerton-Shirey, Adv. Mater. Interfaces 6, 1801321 (2019)

    Article  Google Scholar 

  31. G. Woo, H.U. Kim, H. Yoo, T. Kim, Nanotechnology 32, 045702 (2021)

    Article  CAS  Google Scholar 

  32. X. Tong, E. Ashalley, F. Lin, H. Li, Z.M. Wang, Nano-Micro Lett. 7, 203 (2015)

    Article  Google Scholar 

  33. H. Yang, S. Cai, Y. Zhang, D. Wu, X. Fang, J. Phys. Chem. Lett. 12, 2705 (2021)

    Article  Google Scholar 

  34. H. Kaur, S. Yadav, A.K. Srivastava, N. Singh, J.J. Schneider, O.P. Sinha, V.V. Agrawal, R. Srivastava, Sci. Rep. 6, 34095 (2016)

    Article  CAS  Google Scholar 

  35. H. Kaur, S. Yadav, A.K. Srivastava, N. Singh, S. Rath, J.J. Schneider, O.P. Sinha, R. Srivastava, Nano Res. 11, 343 (2018)

    Article  CAS  Google Scholar 

  36. H. Kaur, V.V. Agrawal, R. Srivastava, ArXiv Preprint ArXiv arXiv:1701.02476 (2017)

  37. S.S. Chou, M. De, J. Kim, S. Byun, C. Dykstra, J. Yu, J. Huang, V.P. Dravid, J. Am. Chem. Soc. 135, 4584 (2013)

    Article  CAS  Google Scholar 

  38. H. Li, Q. Zhang, C.C.R. Yap, B.K. Tay, T.H.T. Edwin, A. Olivier, D. Baillargeat, Adv. Funct. Mater. 22, 1385 (2012)

    Article  CAS  Google Scholar 

  39. R. Ahmad, R. Srivastava, S. Yadav, D. Singh, G. Gupta, S. Chand, S. Sapra, J. Phys. Chem. Lett. 8, 1729 (2017)

    Article  CAS  Google Scholar 

  40. S. Najmaei, Z. Liu, P.M. Ajayan, J. Lou, Appl. Phys. Lett. 100, 013106 (2012)

    Article  Google Scholar 

  41. R. Jha, P.K. Guha, J. Mater. Sci. 52, 7256 (2017)

    Article  CAS  Google Scholar 

  42. H.W. Wang, P. Skeldon, G.E. Thompson, Surf. Coat. Technol. 91, 200 (1997)

    Article  CAS  Google Scholar 

  43. A.T. Massey, R. Gusain, S. Kumari, O.P. Khatri, Ind. Eng. Chem. Res. 55, 7124 (2016)

    Article  CAS  Google Scholar 

  44. Z. Wang, P. Liu, Y. Ito, S. Ning, Y. Tan, T. Fujita, A. Hirata, M. Chen, Sci. Rep. 6, 2 (2016)

    Article  Google Scholar 

  45. A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.Y. Chim, G. Galli, F. Wang, Nano Lett. 10, 1271 (2010)

    Article  CAS  Google Scholar 

  46. S. Sharma, S. Bhagat, J. Singh, M. Ahmad, S. Sharma, J. Mater. Sci. Mater. Electron. 29, 20064 (2018)

    Article  CAS  Google Scholar 

  47. N. Saha, A. Sarkar, A.B. Ghosh, A.K. Dutta, G.R. Bhadu, P. Paul, B. Adhikary, RSC Adv. 5, 88848 (2015)

    Article  CAS  Google Scholar 

  48. T. Mueller, E. Malic, Npj 2D Mater. Appl. 2, 1 (2018)

    Article  Google Scholar 

  49. Y. Fu, Z. Li, Q. Wang, Phys. Lett. A 391, 127139 (2021)

    Article  CAS  Google Scholar 

  50. X.Y. Zhao, L. Liu, J.P. Xu, IEEE Trans. Electron Devices 68, 3087 (2021)

    Article  CAS  Google Scholar 

  51. H.C. Kim, H. Kim, J.U. Lee, H.B. Lee, D.H. Choi, J.H. Lee, W.H. Lee, S.H. Jhang, B.H. Park, H. Cheong, S.W. Lee, H.J. Chung, ACS Nano 9, 6854 (2015)

    Article  CAS  Google Scholar 

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Acknowledgements

The authors are thankful to IUAC for extending the FE-SEM facility funded by the Ministry of Earth Sciences (MoES) under the Geochronology project [MoES/P.O.(Seismic)8(09)-Geochron/2012]. We would like to thanks the DRDO-SSPL (Project CAR-1115/CARS-64/TS/SPL/18) for providing financial support for this work.

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Authors and Affiliations

  1. Amity Institute of Nanotechnology, Amity University Uttar Pradesh, Noida, India

    Rohit Sharma & Om Prakash Sinha

  2. CSIR- National Physical Laboratory, New Delhi, India

    Ashish Kumar & Ritu Srivastava

  3. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, India

    Anit Dawar, Sunil Ojha & Ambuj Mishra

  4. Solid State Physics Laboratory, Timarpur, New Delhi, India

    Anshu Goyal & Radhapiyari Laishram

  5. UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore, India

    V. G. Sathe

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  1. Rohit Sharma
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Sharma, R., Kumar, A., Dawar, A. et al. Liquid Phase Exfoliation and Characterization of Few Layer MoS2 and WS2 Nanosheets as Channel Material in Field Effect Transistor. Trans. Electr. Electron. Mater. 24, 140–148 (2023). https://doi.org/10.1007/s42341-023-00429-9

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