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Recessed Gate Cylindrical Heterostructure TFET, a Device with Extremely Steep Subthreshold Swing

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Abstract

In this paper, we present a novel cylindrical gate-all-around heterostructure TFET that benefits from recessed gate architecture to enable line tunneling of charge carriers normal to the gate at InGaAs/InP heterojunction. In the proposed TFET, the channel and drain regions are composed of a wide-bandgap semiconductor which results in a considerable suppression of ambipolar conduction and off-state current. The device characteristics are investigated by numerical simulations and the results indicate impressive switching performance of the proposed transistor. Owing to designed geometry and employed material system, we obtain an extremely steep subthreshold swing, sub 3mv/dec over 6 decades of drain current, sub 60mv/dec over 10 decades of drain current, and average subthreshold swing of 21mv/dec, an on-state to off-state current ratio of about 1012, and an on-state current of about 100nA at VGS = 0.3 V. The influence of variations in the device dimensions, doping and bias condition on its electrical characteristics is also studied and discussed physically.

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Authors and Affiliations

  1. Electrical and Computer Engineering Department, Semnan University, Semnan, Iran

    Danial Keighobadi, Saeed Mohammadi & Mohaddeseh Mohtaram

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  1. Danial Keighobadi
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  2. Saeed Mohammadi
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  3. Mohaddeseh Mohtaram
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Correspondence to Saeed Mohammadi.

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Keighobadi, D., Mohammadi, S. & Mohtaram, M. Recessed Gate Cylindrical Heterostructure TFET, a Device with Extremely Steep Subthreshold Swing. Trans. Electr. Electron. Mater. 23, 81–87 (2022). https://doi.org/10.1007/s42341-021-00321-4

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