Design and Fabrication of 1.2 kV/10A 4H-SiC Junction Barrier Schottky Diodes with High Current Density


This paper presents an overall optimization procedure and the electrical performances of 1.2 kV/10 A 4H-SiC junction barrier Schottky (JBS) diodes with high current density. To achieve high current density, the epi-layer, the design parameters for active region including p-grid width and cell pitch, and the field limiting ring for edge termination were optimized with analytic calculation to estimate forward electrical performances and with Silvaco atlas™ simulator to estimate reverse electrical performances. Based on the systematic design, the JBS diodes were fabricated and electrically characterized. The experimental results showed that the breakdown voltage (BV) of JBS diode was significantly sensitive to field limiting ring (FLR) space and that the JBS diode with the ratio of pure Schottky contact area to total active area of 0.75 and the FLR space of 1.25 μm had optimum electrical performances such as a forward current density of 370 A/cm2, a reverse leakage current below 20 μA at the reverse anode voltage of 1.2 kV, and the BV of 1400 V. These were in coincidence with the simulation results within 10% error.

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Research was supported by Korea Electrotechnology Research Institute (KERI) Primary research program through the National Research Council of Science and Technology (NST) funded by the Ministry of Science and ICT (MSIT) (No. 19-12-N0101-48)

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Correspondence to In Ho Kang.

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Kang, I.H., Seok, O., Moon, J.H. et al. Design and Fabrication of 1.2 kV/10A 4H-SiC Junction Barrier Schottky Diodes with High Current Density. Trans. Electr. Electron. Mater. 22, 115–120 (2021).

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  • 4H-SiC
  • Junction barrier schottky diode
  • High current density
  • Design optimization