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Total Ionization Dose (TID) Effects on 2D MOS Devices

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Abstract

Electronics and Electricals devices are used in radiations environments for space applications. Radiation has immense potential to disturb the basic properties of electronics devices by interfere with the devices. Radiations affect most MOSFET among the various electronics devices, by creating radiation induced total ionizing dose (TID) effects, single event effects and heavy ion displacement damages, will be discussed. TID effects are persuaded due to ionization energy established in oxides and insulators existing in the devices, by electrons, charged hadrons, neutrons and gammas, prominent to device degradation and letdown. This paper reviews, the basic mechanism of TID in SiO2 and other alternate oxides in device and how, this affects threshold voltage, Sub threshold swing and leakage current in MOSFETs. Radiations response to the silicon-on-insulator technology will also be discussed.

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Authors and Affiliations

  1. Chandigarh Engineering College, Landran, Punjab, India

    Shashi Bala

  2. University Institute of Engineering and Technology, Panjab University, Chandigarh, India

    Raj Kumar & Arvind Kumar

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Bala, S., Kumar, R. & Kumar, A. Total Ionization Dose (TID) Effects on 2D MOS Devices. Trans. Electr. Electron. Mater. 22, 1–9 (2021). https://doi.org/10.1007/s42341-020-00255-3

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