Abstract
The paper was studied the damage effect mechanism of proton radiation on metallic interconnect, where the metal electron migration was caused by space ion irradiation. A physical transfer model of via was constructed, where the equivalent distribution parameters circuit structure was extracted. The parameters of the electromagnetic effect of copper via interconnects were calculated under different irradiation dose rates. The study showed the result of the influence on via length of the effective transmission signal, the influence of radiation on the characteristic impedance, and the effect of radiation on the failure of via, which could provide a theoretical instruction to enhance the anti-TID ability.
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James Ziegler-SRIM&TRIM. http://www.srim.org
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Xu, X., Li, D. Research on Electromagnetic Effect of Irradiation on Silicon via Interconnects. Trans. Electr. Electron. Mater. 21, 258–266 (2020). https://doi.org/10.1007/s42341-020-00174-3
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DOI: https://doi.org/10.1007/s42341-020-00174-3