Materials Impact on the Performance Analysis and Optimization of RF MEMS Switch for 5G Reconfigurable Antenna

  • K. Srinivasa RaoEmail author
  • P. NaveenaEmail author
  • K. Girija Sravani
Regular Paper


In this paper, we have enhanced the performance of the existing switch operating at 35 GHz by using a novel optimization process and these results are compared with the existing experimental results. The same optimization process is utilized to design the switch at 5G mobile communication frequencies (38 GHz) and its performance is analyzed. The switch is designed on the coplanar waveguide having 50 Ω impedance matching and is optimized based on the wireless application system for Ka-band (27–40 GHz) at a resonance frequency of 38 GHz. The proposed switch at 38 GHz exhibits low input reflection coefficient (S11) of 13.86 dB (> 10 dB), low insertion loss (S12) of 0.44 dB (< 1 dB) and high isolation (S21) of 33 dB at Ka-band frequencies. The proposed structure is designed to have less spring constant of 2.38 N/m and actuation voltage of 11.97 V. During UP state position switch develops an ON-state capacitance of 31 fF and OFF state capacitance of 0.152 pF during downstate with a capacitance ratio of 4.90. The switch requires low switching time of 0.19 ms and it can withstand up to the force of 12.97 × 10−4 N which is generated during actuation. Thus, the proposed switch can be effectively optimized for good performance and can be used for high-frequency 5G communication applications.


RF MEMS Switches Pull-In Voltage Capacitance Switching time Isolation Insertion Return Loss 



The authors would like to thank NMDC, supported by Government of India, for providing necessary design facilities through NPMASS.


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Copyright information

© The Korean Institute of Electrical and Electronic Material Engineers 2019

Authors and Affiliations

  1. 1.Department of Electronics and Communications Engineering, MEMS Research CentreKoneru Lakshmaiah Education FoundationVaddeswaram, GunturIndia
  2. 2.National MEMS Design CenterNational Institute of Technology, SilcharSilcharIndia

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