Abstract
Radio frequency micro-electro-mechanical system (RF MEMS) switch is basic component for transponders used in communication system. Switch “OFF/ON” capacitance ratio plays major role in controlling signal to noise ratio. Theoretically, with high dielectric constant material or floating metal concept, capacitance ratio can be improved up to 2000 or even more. Whereas, in most of the practical cases, measured ratio is less than 200. In present paper, RF MEMS capacitive switch LCR parameters are extracted considering parasitic capacitance to explain the mismatch of measured results. Parasitic capacitance is independent from device overlap area. Parasitic capacitance is function of switch geometry and directly proportional to dielectric constant of the substrate material.
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Acknowledgements
The authors would like to thanks Council of Scientific and Industrial Research (CSIR), India for providing financial support under project head MLP-105.
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Bansal, D., Mehta, K., Bajpai, A. et al. Effect of Parasitic Capacitance on RF MEMS Switch OFF/ON Ratio. Trans. Electr. Electron. Mater. 20, 113–117 (2019). https://doi.org/10.1007/s42341-018-00093-4
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DOI: https://doi.org/10.1007/s42341-018-00093-4