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Structural, Carrier Life Time and Optical Properties of Vanadium Doped Tin Oxide Films Developed on Silicon Nanowires for Photo-Catalytic Degradation of Organic Dyes

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Abstract

A series of Vanadium-Doped tin oxide (SnO2) thin films developed on Silicon nanowires (SiNWs) were synthetized by sol-gel spin coating method and characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), ultraviolet–visible (UV–Vis) absorption and carrier lifetime measurements. Several operational parameters involving, vanadium doping amount and the optical properties of the silicon nanowires on photo-catalytic efficiency were investigated by using Rhodamine B (RhB) as an Organic Dye for the degradation under the illumination of Ultraviolet. Under optimum conditions, SnO2 doped with 15% of vanadium and deposited on silicon nanowires achieved 89.56% Rhodamine B degradation after 120 min of Ultraviolet illumination.

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Acknowledgements

The authors would like to acknowledge the financial support of the Ministry of Higher Education and Scientific Research of Tunisia.

Funding

The authors did not receive support from any organization for the submitted work. No funding was received to assist with the preparation of this manuscript. No funding was received for conducting this study. No funds, grants, or other support were received.

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All authors contributed to the study’s conception and design. All authors read and approved the fnal manuscript.

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Correspondence to Malek Atyaoui.

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Atyaoui, M., Wiem, B., Ines, E. et al. Structural, Carrier Life Time and Optical Properties of Vanadium Doped Tin Oxide Films Developed on Silicon Nanowires for Photo-Catalytic Degradation of Organic Dyes. Chemistry Africa (2024). https://doi.org/10.1007/s42250-024-00981-8

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