Abstract
The synthesis of hexagonal wurtzite one-dimensional GaN nanowires on Si (111) substrate was investigated using a thermal chemical vapor deposition process. The diameter of the GaN NWs was controlled by varying the growth time using a mixture of GaN powder and gallium metal with the ammonia gas reaction. The grown GaN nanowires exhibited a hexagonal perfect wurtzite structure which has been confirmed by high resolution X-ray diffraction analysis. The morphology and elemental analysis of grown GaN nanowires has been studied by scanning electron microscopy and energy dispersive X-ray analysis. Photoluminescence spectra under the excitation of 244 nm showed a strong near band-edge emission around ~ 372 nm and a broad emission at 450–650 nm related to deep-level defects.
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References
S. Nakamura, T. Mukai, T. Senoh, Candela class high brightness InGaN/AlGaN double heterostructure blue light emitting diodes. Appl. Phys. Lett. 64, 1687–1689 (1994)
Y. Liu, X. Meng, X. Wan, Z. Wang, H. Huang, H. Long, Z. Song, G. Fang, Synthesis and field emission studies of tower-like GaN nanowires. Nanoscale Res. Lett. 9, 607 (2014)
F. Schuster, S. Weiszer, M. Hetzl, A. Winnerl, J.A. Garrido, M. Stutzmann, Influence of substrate material, orientation, and surface termination on GaN nanowire growth. J. Appl. Phys. 116, 054301 (2014)
E. Park, S. Shim, R. Ha, E. Oh, B.W. Lee, H.J. Choi, Reassembling of Ni and Pt catalyst in the vapor–liquid–solid growth of GaN nanowires. Mater. Lett. 65, 2458 (2011)
D. Aurongzeb, D.Y. Song, G. Kipshidze, B. Yavich, L. Nyakiti, R. Lee, J. Chaudhuri, H. Temkin, M. Holtz, J. Electron Mater, vol. 37, 1076 (2008)
J.K. Jain, X.L. Chen, Q.Y. Tu, Y.P. Xu, L. Dai, M. Zhao, Preparation and optical properties of prism-shaped GaN nanorods. J. Phys. Chem. B 108, 12024 (2004)
S. Ding, P. Lu, J.G. Zheng, X.F. Yang, F.L. Zhao, J. Chen, H. Wu, M.M. Wu, Textured tubular nanoparticle structures: precursor-templated synthesis of GaN sub-micrometer sized tubes. Adv. Funct. Mater. 17, 1879 (2007)
E.I. Givargizov, Fundamental aspects of VLS growth. J. Cryst. Growth 31, 20–30 (1975)
Pu Huang, Hua Zong, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Yi-min Ding, Ying-ping He, Jing Lu and Xiao-dong Hu, ACS Nano 9(9) (2015) pp. 9276–9283
Vladimir Dubrovskii, Vapor–Liquid–Solid Growth of Nanowires, Nucleation Theory and Growth of Nanostructures, Book series, (2013) pp. 275-395
B. Kuppulingam, R. Loganathan, K. Prabakaran, K. Baskar, Cu catalyst assisted growth of GaN nanowires on sapphire substrate for p-type behaviour. Optik 127, 3762–3765 (2016)
B. Kuppulingam, G.M. Bhalerao, S. Singh, K. Baskar, Growth behavior of GaN nanowires on c-plane sapphire substrate by applying various catalysts. Appl. Phys. A. 122(7), 1–7 (2016)
R. Loganathan, B. Kuppulingam, P. Panigrahi, B. Krishnan, Growth of gallium nitride nanowires on sapphire and silicon by chemical vapor deposition for water splitting applications. Appl. Surf. Sci. 449, 213–220 (2018)
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The author (B.K) would like to thank Crystal Growth Centre, Anna University, Chennai, for providing facilities to carry out research activities.
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Kuppulingam, B., Baskar, K. Structural and luminescence properties of GaN nanowires grown on Si substrate by Au catalyst. emergent mater. 3, 591–594 (2020). https://doi.org/10.1007/s42247-020-00131-z
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DOI: https://doi.org/10.1007/s42247-020-00131-z