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Solution-processed Pb0.8Ba0.2ZrO3 as a gate dielectric for low-voltage metal-oxide thin-film transistor

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Abstract

A solution-processed low-voltage metal-oxide thin-film transistor (TFT) is fabricated by using ferroelectric perovskite structure barium zirconate (PBZ) as gate dielectric. This PBZ thin film is deposited on heavily doped Si substrate (p++-Si) by low-cost sol-gel process followed by annealing at 830 °C. The thin film is characterized by XRD, UV-Vis absorption spectroscopy and atomic force microscopy (AFM) that reveals fully oxidized PBZ thin film is highly crystalline in nature with high optical transparency in visible region that exhibited a lower roughness of 4.6 nm. Solution-processed indium zinc oxide (IZO) has been used as a channel semiconductor for bottom-gate top-contact TFT. The fabricated device require < 5 V operating voltage to saturate with high drain current which is very beneficial for low-power electronics because of its low operating voltage with respect to convention SiO2 gate dielectric device that required ~ 40 V operating voltage. This typical TFT shows an excellent electron mobility of 4.5 cm2 V−1 s−1 with on/off ratio 5 × 103 and subthreshold swing 0.35 V/decade.

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Acknowledgments

Funding information

This work was supported by “Science and Engineering Research Board”, India (EMR/2015/000689). Authors are grateful to Central Instrument Facility Centre, IIT(BHU) for providing the SEM and AFM measurement facility. Anand Sharma and Nitesh K Chourasia thanks IIT(BHU) for providing PhD fellowship.

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Authors and Affiliations

  1. School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi, 221005, India

    Vishwas Acharya, Anand Sharma, Nitesh K. Chourasia & Bhola N. Pal

  2. Organic Electronics Research Center and Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City, Taiwan, 243

    Bhola N. Pal

Authors
  1. Vishwas Acharya
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  2. Anand Sharma
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  3. Nitesh K. Chourasia
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  4. Bhola N. Pal
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Correspondence to Bhola N. Pal.

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Acharya, V., Sharma, A., Chourasia, N.K. et al. Solution-processed Pb0.8Ba0.2ZrO3 as a gate dielectric for low-voltage metal-oxide thin-film transistor. emergent mater. 3, 57–62 (2020). https://doi.org/10.1007/s42247-019-00065-1

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  • DOI: https://doi.org/10.1007/s42247-019-00065-1

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