Abstract
This paper makes a fresh suggestion for a silicon-on-insulator double-gate transistor technique. As an insulating layer in this technology, buried oxide has a lower thermal conductivity than silicon, which affects nanoscale MOSFETs. Because silicon has a better heat transfer capacity than silicon oxide, a silicon window under the channel area in this paper replaces a portion of the buried oxide to lower the device's maximum temperature. A transistor with good performance from a temperature standpoint can be obtained, according to simulation using the MATLAB simulation software, by taking into account the ideal value for the length and thickness of the silicon window. Because of this problem, the double-gate transistor performs more consistently at the nanoscale and higher temperatures. The maximum temperature was calculated for the buried oxide thickness of 10 nm. The simulation results showed that the proposed structure had a 17% temperature reduction compared to similar works. Therefore, the proposed structure can be a suitable alternative to conventional structures.
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Science and Technology Research Project of Jiangxi Provincial Department of Education, GJJ2203006.
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ZC: writing—original draft preparation, conceptualization, supervision, project administration. HP: methodology, software, validation, language review.
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Cai, Z., Pan, H. A novel method to reduce heat in semiconductor field-effect transistors. Multiscale and Multidiscip. Model. Exp. and Des. 7, 1425–1435 (2024). https://doi.org/10.1007/s41939-023-00293-3
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DOI: https://doi.org/10.1007/s41939-023-00293-3