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Switching and frequency response of ITO-gated GaAs OPFET models for VLC applications

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Abstract

Visible-Light Communication (VLC) application such as traffic lighting requires high-speed data transmission wherein at the receiving end, a fast response and wide bandwidth photodetector should decode the sent data. High-speed detection is achievable through a photoFET such as Optical Field Effect Transistor (OPFET) while maintaining tremendously large photocurrent gain or sensitivity. In this paper, we investigate the switching and frequency responses of GaAs OPFET models (buried-gate front-illuminated, and generalized, models) with Indium-Tin-Oxide (ITO) gate. These responses have been contrasted to that with gold (Au) gate investigated in the previous work showing a considerable enhancement in the 3-dB bandwidth and an almost constant switching/amplification response. The effect of structural parameters on the switching and frequency responses of the buried-gate models has been studied. The switching parameters and the bandwidth-dependence upon the optical power have been analyzed. The attained responses suggest that the devices will serve good purpose in high-speed applications.

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  1. Electronics and Telecommunication Department, Goa Engineering College (Goa University/Govt. of Goa), Farmagudi, Ponda, Goa, 403401, India

    Jaya V. Gaitonde & Rajesh B. Lohani

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  1. Jaya V. Gaitonde
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Correspondence to Jaya V. Gaitonde.

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Gaitonde, J.V., Lohani, R.B. Switching and frequency response of ITO-gated GaAs OPFET models for VLC applications. Int. j. inf. tecnol. 13, 1005–1017 (2021). https://doi.org/10.1007/s41870-021-00665-3

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