Abstract
Currently, one of the intensively solving problems is increasing of performance of solid-state electronics devices. At the same time, it attracted an interest influence of radiation processing on semiconductor materials in the framework of solid-state electronics devices to increase their reliability. It is required to decrease quantity of radiation defects, which were generated during ion doping and other types of radiation processing of the working area of an integrated circuits, to the above increasing reliability of the above devices. The figure shows drain of radiation defects from the working area of the integrated circuits. The drain leads to decreasing of quantity of the radiation defects in the considered area. The approach is based on the difference between properties of materials of the layers in the considered multilayer structure. Precisely because of this difference, one could accumulate the considered defects far from the above working area. We introduced an analytical approach for analysis of mass and heat transfer in a multilayer structures with account the spatial and temporal variations of their parameters, as well as the nonlinearity of the considerate processes.
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Pankratov, E.L. On organization of drainage of radiation defects from working area of an integrated circuit. ISSS J Micro Smart Syst (2023). https://doi.org/10.1007/s41683-023-00121-3
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DOI: https://doi.org/10.1007/s41683-023-00121-3