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On estimation of growth velocity of films during magnetron sputtering

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Abstract

In this paper, we analyze mass transfer during growth of epitaxial layers in magnetrons. Due to analysis of influence of physical and technological parameters on the growth, we formulate several recommendations to improve properties of epitaxial layers: increasing of homogeneity of films; decreasing of quantities of defects of films; dependence of properties of heterostructure on geometric dimensions of magnetron (in fact this is correlation between the above geometric dimensions and growth time). We introduce an analytical approach for analyzing mass transfer. The approach gives a possibility to take into account the nonlinearity of processes, as well as changes in parameters in space and time. The approach also gives a possibility to analyze the mass transfer without crosslinking of solutions on interfaces between layers of multilayer structures.

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References

  • Chakraborty A, Xing H, Craven MD, Keller S, Mates T, Speck JS, Den Baars SP, Mishra UK (2004) Nonpolar a-plane ptype GaN and p-n Junction Diodes. J Appl Phys 96(8):4494

    Article  Google Scholar 

  • Dostanko AP, Rusetsky AM, Bordusov SV, Lanin VL, Anufriev LP, Karpovich SV, Zharsky VV, Plebanovich VI, Adamovich AL, Grozberg YuA, Golosov DA, Zavodsky SM, Solov’ev YA, Dayniak IV, Kovalchuk NS, Petukhov IB, Telesh EV, Madveyko SI (2011) Electrophysical processes and equipment in technology of micro- and nanoelectronics. Bestprint, Minsk

    Google Scholar 

  • Druzhkov SS (2013) Mathematical modelling of process og magnetron sputtering. Bull USATU 17(8):137–142

    Google Scholar 

  • Gusev VG, Gusev YuM (1991) Electronics. Higher School, Moscow

    Google Scholar 

  • Lachin VI, Savelov NS (2001) Electronics. Rostov-on-Don, Phenics

    Google Scholar 

  • Li Y, Antonuk LE, El-Mohri Y, Zhao Q, Du H, Sawant A, Wang Y (2006) Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors. J Appl Phys 99(6):064501

    Article  Google Scholar 

  • Lundin VV, Sakharov EE, Zavarin MA, Sinitsin AE, Nikolae VВ, Mikhailovsky GA, Brunkov PN, Goncharov VV, Ber BY, Kazantsev DY, Tsatsul’nikov AF (2009) Insulating GaN Epilayers Co-Doped with Iron and Carbon. Semiconductors 43(7):996

    Google Scholar 

  • Mitsuhara M, Ogasawara M, Sugiura H (1998) Beryllium doping of InP during metalorganic molecular beam epitaxy using bismethylcyclopentadienyl-beryllium. J Cryst Growth 183:38

    Article  Google Scholar 

  • Pankratov EL, Bulaeva EA (2014) Modelling Mass and Heat Transport during Gas Phase Epitaxy in a Reactor with Rotating Substrate. On Possibility to Improve Of Properties of Films. Int J Comput Mater 3(3):1450013–1450026

    Google Scholar 

  • Pankratov EL, Bulaeva EA (2015a) On optimization of regimes of epitaxy from gas phase. some analytical approaches to model physical processes in reactors for epitaxy from gas phase during growth films. Rev Theor Sci 3(4):365–398

    Article  Google Scholar 

  • Pankratov EL, Bulaeva EA (2015b) Optimization of pressure in epitaxial growth from gas phase system to decrease energy costs. Quantum Matter 4(5):456–457

    Article  Google Scholar 

  • Pankratov EL, Bulaeva EA (2015c) On Prognosis of Epitaxy from Gas Phase Process to Improve Properties of Epitaxial Layers. 3D Res 6(4):46–56

    Article  Google Scholar 

  • Pimenov YM, Man VI, Muravtsov AD (2010) Technical electrodynamics. Radio and Communication, Moscow

    Google Scholar 

  • Sokolov YuD (1955) About the definition of dynamic forces in the mine lifting. Appl Mech 1(1):23–35

    Google Scholar 

  • Sorokin LM, Veselov NV, Shcheglov MP, Kalmykov AE, Sitnikova AA, Feoktistov NA, Osipov AV, Kukushkin SA (2008) Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy. Techn Phys Lett 34(22):68

    Google Scholar 

  • Stepanenko IP (1980) Basis of microelectronics. Soviet Radio, Moscow

    Google Scholar 

  • Talalaev RA, Yakovleva EV, Karpova SY, Makarov YN (2001) Detailed models of III-V MOVPE in commercial reactors. J Cryst Growth 230:232

    Article  Google Scholar 

  • Vorob’ev GS, Sokolov SV, Pisarenko LD, Zhurba VO (2010) Theory of electromagnetic field and basis of microwave techniques. State University of Sumy, Sumy

    Google Scholar 

  • Vorob’ev AA, Korabl’ev VV, Karpov SY (2003) The use of magnesium to dope gallium nitride obtained by molecular-beam epitaxy from activated nitrogen. Semiconductors 37(7):98

    Article  Google Scholar 

  • Zhukov VV, Krivobokov VP, Yanin SN (2006) Sputtering of the magnetron diode target in the presence of an external ion beam. Tech Phys 51(4):453–458

    Article  Google Scholar 

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  1. Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod, Russia, 603950

    E. L. Pankratov

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  1. E. L. Pankratov
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Pankratov, E.L. On estimation of growth velocity of films during magnetron sputtering. ISSS J Micro Smart Syst 12, 133–138 (2023). https://doi.org/10.1007/s41683-023-00119-x

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