Abstract
In this paper, a reliable K-band RF MEMS shunt switch with high isolation is presented. The switch is fabricated on a high-resistivity silicon substrate (ρ = 10,000 Ω cm, εr = 11.7, h = 675 µm) using bulk micro-machined techniques. A novel symmetrical tri-layer sandwich (insulator–metal–insulator) concept is implemented in membrane design which results in stress-free membrane and thus results in lower actuation voltage of 15V. The inductive effect created in the CPW ground not only brings down the resonant frequency which eliminates the need to increase the membrane length but also improves the isolation (> 40 dB). This electrostatically actuated switch has measured insertion loss and isolation of 1.51 dB and 46.42 dB at 20.25 GHz, respectively. The switch shows consistent performance in terms of RF as well as mechanical after 8 h of continuous operation without stiction. The switch can have applications in telecommunication, defense and space-based phased array system, etc.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Comart I, Topalli K, Demir S, Akin T (2014) Microwave characterization of a wafer-level packaging approach for RF MEMS devices using glass frit bonding. IEEE Sens J 14(6):2006–2011
Ehab KIH (2006) Modelling, design and optimization of radio-frequency microelectromechanical structures, a Ph.D. dissertation, University of Magdeburg.
Goldsmith C, Randall J, Eshelman S, Lin TH, Denniston D, Chen S, Norvell B (1996) Characteristics of micromachined switches at microwave frequencies. In: Microwave Symposium Digest, IEEE MTT-S International, Vol. 2, pp: 1141–1144
Hector J, Randy JR (2000) MEMS for Rf/microwave wireless applications: the next wave-part II. Microwave J 44:124–144
Hyman D, Schmitz A, Warneke B, Hsu TY, Lam J, Brown J, Schaffiner J, Walston A, Loo RY, Tangonan GL, Mehregany M, Lee J (1999) Surface micromachined RF MEMS switches on GaAs substrates. Int J RF Microwave CAE 9(4):348–361
Katsuki T, Nakatani T, Okuda H, Toyoda O, Ueda S, Nakazawa F (2012) A highly reliable single- crystal Silicon RF MEMS switch using au sub-micron particles for wafer level LTCC Cap Packaging. In: IEEE, 2012 pp: 1–4.
Kelly M, Malshe AP, Barlow F (2005) Modeling-based design optimization of wafer-level and chip-scale packaging for RF- MEMS devices.In: Electronic Components and Technology Conference, 2005, IEEE.
Kim CH, Hong Y, Lee S, Kwon S, Song I (2006) Force coupled electrostatic RF MEMS SP3T Switch. In: IEEE pp: 1281–1284.
Mercado L, Kuo SM, Lee TY, Liu L (2003) A mechanical approach to overcome RF MEMS switch stiction problem. In: Electronic Components and Technology Conference pp: 377–384.
Pacheco SP, Katehi LP, Nguyen CC (2000) Design of low actuation voltage RF MEMS switch. In: IEEE MTT-S Digest 2000 pp: 165–168.
Rangra KJ (2005) Electrostatic low actuation voltage RF MEMS switches for telecommunications, a PhD Dissertation, University of Trento, Italy
Rangra K, M B, L Leandro, Giacomozzi F, Collini C, Zen M, Soncini G, del Tin L, Gaddi R (2005) Symmetric toggle switch a new type of RF MEMS switch for telecommunication applications: design and fabrication. Sens Actuator A 123–124:505–514
Rebeiz GM (2003) “RF MEMS theory, design and technology. John Wiley and Sons, New Jersey
Shen SC, Caruth D, Feng M (200) Broadband low actuation voltage RF MEMS switches. In: IEEE GaAs Digest 2000 pp: 161–164.
Smith AS, Gabriel M R, Jeremy BM (2001) RF MEMS switches and Switch circuits. IEEE Microwave Mag ISSN pp: 1527–3342
Wong CH, Tan MJ, Liew KM (2003) Electrical characterization of capacitive microswitch. Sens Actuators 102:296–310
Yao JJ (2000) RF MEMS from a device perspective. J Micromech Microeng 10:R9–R38
Yao JJ, Chang MF (1995) A surface micromachined miniature switch for telecommunications applications with signal frequencies from DC up to 4 GHz. In: Proceedings of the International Conference on Solid-State Sensors and actuators Digest, Stockholm, Sweden, pp. 384-387
Yong Z, Horacio DE (2004) Reliability of capacitive RF MEMS switches at high and low temperatures. Wiley Periodicals Inc., New Jersey
Acknowledgement
We would like to acknowledge Dr. G Sateesh Reddy, Chairman, DRDO for encouragement and support for this research work. We are also grateful to the fabrication team of STARC, Bengaluru and characterization team at CeNSE Lab, IISc. Bengaluru.
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Kumar, V., Basu, A. & Koul, S.K. Inductively tuned bulk micromachined RF MEMS switch with high isolation and improved reliability. ISSS J Micro Smart Syst 9, 49–53 (2020). https://doi.org/10.1007/s41683-020-00047-0
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s41683-020-00047-0