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ID effects on beam dynamics in the SSRF-U storage ring

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Abstract

This paper introduces the proposed insertion device (ID) scheme for the Shanghai Synchrotron Radiation Facility Upgrade. Based on this scheme, the influences of the ID radiation on the intra-beam scattering emittance and energy spread were evaluated. Optical distortion caused by the IDs was comprehensively examined and compensated using both local and global corrections. Subsequently, a frequency map analysis method was used to identify potentially dangerous resonance lines. In addition, the dynamic aperture, energy acceptance, and Touschek lifetime were calculated after considering high-order magnetic field errors to ensure that the ID effect did not affect the operation of the storage ring.

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Data availability

The data that support the findings of this study are openly available in Science Data Bank at https://doi.org/10.57760/sciencedb.j00186.00088 and https://cstr.cn/31253.11.sciencedb.j00186.00088.

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Authors and Affiliations

  1. Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201800, China

    Li-Yuan Tan, Shun-Qiang Tian & Wen-Zhi Zhang

  2. University of Chinese Academy of Sciences, Beijing, 100049, China

    Li-Yuan Tan

  3. Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201204, China

    Shun-Qiang Tian, Xin-Zhong Liu, Xu Wu & Wen-Zhi Zhang

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  1. Li-Yuan Tan
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  3. Xin-Zhong Liu
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  4. Xu Wu
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Contributions

All authors contributed to the study conception and design. Material preparation, data collection, and analysis were performed by Li-Yuan Tan, Shun-Qiang Tian, and Xin-Zhong Liu. The first draft of the manuscript was written by Li-Yuan Tan and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Shun-Qiang Tian.

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Tan, LY., Tian, SQ., Liu, XZ. et al. ID effects on beam dynamics in the SSRF-U storage ring. NUCL SCI TECH 34, 174 (2023). https://doi.org/10.1007/s41365-023-01322-z

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