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Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates

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Abstract

The total dose effect of 60Co γ-rays on 0.8-μm H-gate partially depleted-silicon-on-insulator NMOS devices was investigated at different irradiation doses. The results show that the shift in saturation current at high dose rate is greater than that at low dose rate, due to increase in interface-state density with decreasing dose rate; the scattering effect of interface state on electrons in the channel causes degradation in carrier mobility; and the body current and transconductance of the back gate enhance low-dose-rate sensitivity when the irradiation is under OFF-bias. A double transconductance peak is observed at 3 kGy(Si) under high dose rates.

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Acknowledgements

These sample irradiations were conducted in the 60Co Source at the Northwest Institute of Nuclear Technology. The authors thank Mr. Yao Zhi-Bin, Mr. He Bao-Ping, and their colleagues for their kind help in the experiments.

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Authors and Affiliations

  1. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an, 710071, China

    Qian-Qiong Wang, Hong-Xia Liu, Shu-Long Wang, Chen-Xi Fei, Dong-Dong Zhao, Shu-Peng Chen & Wei Chen

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  1. Qian-Qiong Wang
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  2. Hong-Xia Liu
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  3. Shu-Long Wang
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  4. Chen-Xi Fei
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  7. Wei Chen
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Corresponding authors

Correspondence to Hong-Xia Liu or Shu-Long Wang.

Additional information

This work was supported by the National Natural Science Foundation of China (No. 61376099), the Foundation for Fundamental Research of China (No. JSZL2016110B003) and the Major Fundamental Research Program of Shaanxi (No.2017ZDJC-26).

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Wang, QQ., Liu, HX., Wang, SL. et al. Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates. NUCL SCI TECH 28, 151 (2017). https://doi.org/10.1007/s41365-017-0295-7

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  • DOI: https://doi.org/10.1007/s41365-017-0295-7

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