Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates
The total dose effect of 60Co γ-rays on 0.8-μm H-gate partially depleted-silicon-on-insulator NMOS devices was investigated at different irradiation doses. The results show that the shift in saturation current at high dose rate is greater than that at low dose rate, due to increase in interface-state density with decreasing dose rate; the scattering effect of interface state on electrons in the channel causes degradation in carrier mobility; and the body current and transconductance of the back gate enhance low-dose-rate sensitivity when the irradiation is under OFF-bias. A double transconductance peak is observed at 3 kGy(Si) under high dose rates.
KeywordsPDSOI device Total dose irradiation Interface states Mobility
These sample irradiations were conducted in the 60Co Source at the Northwest Institute of Nuclear Technology. The authors thank Mr. Yao Zhi-Bin, Mr. He Bao-Ping, and their colleagues for their kind help in the experiments.
- 17.B.P. He, G.Z. Wang, H. Zhou et al., Predicting NMOS device radiation response at different dose rates in γ ray environment. Acta Phys. Sinica 52, 188–191 (2003). (in Chinese) Google Scholar