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A Tri-Band Broadband Microstrip Antenna Based on DGS and Parasitic Elements

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Iranian Journal of Science and Technology, Transactions of Electrical Engineering Aims and scope Submit manuscript

Abstract

In this paper, a novel three-band microstrip antenna with parasitic elements based on defected ground structure (DGS) is proposed. By loading a closed parasitic ring in the center of the DGS, the bandwidth characteristics of the antenna are allowed to be tuned flexibly. Moreover, a pair of symmetrical rectangular parasitic patches are introduced on both sides of the feed line to adjust the impedance of the antenna. The three working bands are allocated in 2.10–2.67 GHz (23.9%), 3.35–4.15 GHz (21.3%) and 7–8.07 GHz (14.2%), respectively, fully covering the WLAN/WIMAX/duplex mode n77 band. The design is fully printed, low-profile and flexible to the practical application. For demonstration, the proposed balanced filter is optimized by full-wave simulations and verified by measurements of a fabricated sample. The measurements are in very good agreement with the simulation results, which indicates an average increase of more than 17.2% in the three bandwidths and a decrease in size approximately 64% in comparison with other published works.

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Authors and Affiliations

  1. School of Electrical Engineering and Automation, Henan Polytechnic University, Jiaozuo, Henan, China

    Shuai Wang, Hao Wu & Yapeng Duan

Authors
  1. Shuai Wang
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  2. Hao Wu
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  3. Yapeng Duan
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Contributions

SW was mainly responsible for the language modification in the thesis. HW was mainly responsible for the experimental simulation and thesis writing in the thesis. YD was mainly responsible for the actual testing of the antenna prototype.

Corresponding author

Correspondence to Hao Wu.

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The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

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Wang, S., Wu, H. & Duan, Y. A Tri-Band Broadband Microstrip Antenna Based on DGS and Parasitic Elements. Iran J Sci Technol Trans Electr Eng 46, 883–892 (2022). https://doi.org/10.1007/s40998-022-00505-5

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  • DOI: https://doi.org/10.1007/s40998-022-00505-5

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