Abstract
A heterojunction field effect transistor has been studied by a model run self-consistently from the solution of the Schrödinger equation coupled with Poisson equation. The properties of the device drain current, the band structure of device, and the charge distribution have been obtained because of material composition. The efforts have shown that unique reason of having the high carrier concentration in heterostructures is to manage with the piezoelectric and spontaneous polarization. Simulation by means of polarization-related quantities in nitride-based heterostructure systems reveals that the device characterizations of nitride alloys are a linear function of alloy composition. Our simulation results are comparable to other theoretical calculations.
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The Mathematica code used for the calculations of the characteristics are available from the corresponding author upon reasonable request.
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Appendix
Appendix
Incomplete Gamma functions \(I_{r} \left( {a,b} \right)\) and \(F_{r} \left( a \right)\) may be written in Mathematica code as follows.
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Saygı, S. Characteristics of High-Al-Composed Quantum Structure Under Strain Effects. Iran J Sci Technol Trans Sci 45, 727–731 (2021). https://doi.org/10.1007/s40995-020-01022-y
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DOI: https://doi.org/10.1007/s40995-020-01022-y