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Single-crystal diamond grown through high-power-density epitaxy used for a high-performance radiation detector


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Radiation detectors are important device-level characterization tools of the carrier dynamics of diamond as an ultrawide-bandgap semiconductor. Herein, a high-quality single-crystal diamond was grown on a high-temperature and high-pressure diamond substrate through microwave plasma chemical vapor deposition. We achieved the enhancement of microwave power density by compressing a plasma ball and optimizing the carbon-hydrogen ratio (C/H) within the plasma and thus considerably diminished the impurity and dislocation densities of the diamond epilayer. The full width at half maximum of the X-ray (004) reflection rocking curve was 15 arcsec, and no impurity emission bands were detectable in the photoluminescence spectrum at room temperature (25°C). The radiation detector made from this 200-µm-thick diamond epifilm demonstrated an α-particle response with a charge collection efficiency of 97.03% and energy resolutions of 2.1% for electrons and 97.86% and 1.5% for holes. Furthermore, the product of mobility and lifetime of electrons and holes reached 8 × 10−5 and 4.1 × 10−4 cm2 V−1, respectively. The epitaxial method reduces costs while fulfilling the stringent requirements of radiation detection for commercial applications.


辐射探测器是用来研究超宽禁带半导体金刚石中载流子动力学的重要表征工具. 本文采用微波等离子体化学气相沉积(MPCVD)方法在高温高压(HTHP)金刚石衬底上制备了高质量的单晶金刚石. 我们通过压缩等离子体球来提高微波功率密度, 优化了等离子体中的碳氢(C/H)比, 并显著降低了金刚石外延层中的杂质和位错含量. (004)面X射线衍射摇摆曲线的半高宽(FWHM)仅为15弧秒, 在室温下的光致发光光谱中没有检测到杂质发光带. 使用制备的200 µm厚的外延金刚石膜制成的辐射探测器可对α-粒子响应, 其电子的电荷收集效率为97.03%, 能 量分辨率为2.1%, 空穴的电荷收集效率和能量分辨率为97.86%和1.5%. 此外, 电子和空穴的迁移率和寿命的乘积分别达到8 × 1 0 − 5 和 4.1 × 10−4 cm2 V−1. 此方法有望满足商用金刚石辐射探测器对性能和成本控制的严苛要求.

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This work was supported in part by the National Key Research and Development Program of China (2022YFB3608600), National Natural Science Foundation of China (62134006, 62204193, 62374122 and 62127812), China Postdoctoral Science Foundation (2021TQ0256), Key research and development program of Anhui Province (2023a05020006), and Key R&D Plan of Shandong Province (2022CXGC020306).

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Authors and Affiliations



Author contributions All the authors contributed to the manuscript. Ding S, Su K, Ren Z, Chen J and Yang Z did all the experiments and prepared for this paper. Zhang JF, Zhang JC, Hao Y, Su K and Ren Z provided their technical guidance and carried out fruitful discussions on this paper.

Corresponding authors

Correspondence to Jinfeng Zhang  (张金风), Kai Su  (苏凯) or Zeyang Ren  (任泽阳).

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Conflict of interest The authors declare that they have no conflict of interest.

Additional information

Jinfeng Zhang is a professor at the Integrated Circuit Department of Xidian University. She received her BS degree and PhD degree in electronic science and technology from Xidian University in 2000 and 2006, respectively. Her recent research focuses on ultrawide-bandgap diamond (C) semiconductor materials and devices.

Kai Su received his BS degree from Harbin Institute of Technology in 2010, his MS degree from Sichuan University in 2013, and his PhD degree from Xidian University in 2020. He has been an associate professor at the Integrated Circuit Department of Xidian University since 2023. Currently, he is mainly engaged in the research on ultrawide-bandgap semiconductor diamond materials and devices.

Zeyang Ren is an associate professor at the Integrated Circuit Department of Xidian University. He obtained his BS degree and PhD degree from Xidian University in 2014 and 2018, respectively, and was promoted to associate professor in 2021. His main research directions include diamond epitaxy and electronic devices.

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Ding, S., Zhang, J., Su, K. et al. Single-crystal diamond grown through high-power-density epitaxy used for a high-performance radiation detector. Sci. China Mater. 67, 2329–2334 (2024).

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