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Super high-speed self-powered photodetector based on solution-processed transparent p-type amorphous phosphorous-doped SnO film

溶液法制备透明p型非晶磷掺杂SnO薄膜基超高速自 供电光电探测器

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Abstract

It is challenging to simply prepare high-performance optoelectronic p-type oxide semiconductors because their strong hole localization makes it difficult to generate mobile hole carriers. In this study, amorphous transparent p-type SnO films were prepared in a glove box using a simple solgel method. Phosphorus (P) doping improves the optoelectronic properties of the SnO films and their corresponding self-powered heterojunction photodetectors. The response time of the self-powered heterojunction photodetectors based on P-doped SnO (P-SnO) is 40.29 µs/76.24 (0 V bias), which is the fastest among other p-type oxide-based photodetectors. The P-SnO photodetector also possesses the fastest decay time compared with typical n-type amorphous gallium oxide photodetectors. Introducing impurity energy levels through P doping is responsible for the increase in photogenerated electron-hole pairs and photocurrent and device performance enhancement. This work not only provides a simple method for preparing high-performance and low-cost p-type P-SnO films and photodetectors, but also offers a new approach for improving the performance of various p-type oxide semiconductors and devices.

摘要

p型氧化物半导体具有很强的空穴局域性, 难以产生容易移动的 空穴载流子, 用简单方法制备高光电性能的p型氧化物半导体极具挑战 性. 本研究采用简单溶胶-凝胶法在手套箱中制备了非晶透明p型SnO薄 膜. 磷(P)掺杂改善了SnO薄膜及其相应自供电异质结光电探测器的光 电性能. 基于P掺杂SnO (P-SnO)的自供电异质结光电探测器的响应时 间为40.29 μs/76.24 μs (0 V偏置), 与其他p型氧化物基光电探测器相比 响应时间最快. 与典型的n型非晶氧化镓光电探测器相比, P-SnO光电 探测器还具有最快的衰减时间. 本文通过P掺杂引入杂质能级, 导致光 生电子-空穴对和光电流的增加以及器件性能的提高. 这一工作不仅为 制备高性能、低成本的p型P-SnO薄膜和光电探测器提供了一种简单 的方法, 而且为改进各种p型氧化物半导体和器件性能提供了一种新的 途径.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (61404116 and 11975212), Guangdong Basic and Applied Basic Research Foundation (2023A1515010073), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars (KZ15Z20053).

Author information

Authors and Affiliations

  1. Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan, 430074, China

    Li Xu  (徐力), Li Qin  (覃粒), Yi Huang  (黄易), Yi Meng  (孟伊), Jianmei Xu  (徐建梅), Ling Zhao  (赵凌), Wei Zhou  (周炜), Qing Wang  (王庆) & Jian Sun  (孙剑)

  2. Zhengzhou Research Institute, Harbin Institute of Technology, Zhengzhou, 450046, China

    Gang Hao  (龚浩)

Authors
  1. Li Xu  (徐力)
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  2. Li Qin  (覃粒)
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  3. Yi Huang  (黄易)
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  4. Yi Meng  (孟伊)
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  5. Jianmei Xu  (徐建梅)
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  6. Ling Zhao  (赵凌)
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  7. Wei Zhou  (周炜)
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  8. Qing Wang  (王庆)
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  9. Gang Hao  (龚浩)
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Contributions

Author contributions Xu L performed the experiments, analyzed the data, and wrote the paper under the guidance of Hao G and Sun J. Qin L and Huang Y performed the experiments. Meng Y performed the microscopic analysis of the sample, modeled it, and summarized the mechanism for the performance improvement. Xu J, Zhao L, Zhou W, and Wang Q conducted the data analyses of the experiments. Hao G and Sun J conducted the design and feasibility analyses of the experiments, revised the paper, and ensured its completion. All authors contributed to the general discussion.

Corresponding authors

Correspondence to Yi Meng  (孟伊), Gang Hao  (龚浩) or Jian Sun  (孙剑).

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Conflict of interest The authors declare that they have no conflict of interest.

Additional information

Supplementary information Supporting data are available in the online version of the paper.

Li Xu received his bachelor’s degree from China University of GeoSciences (Wuhan) in 2022. He is currently studying for a master’s degree. His research interests focus on novel functional materials and the related flexible transparent electronics.

Jian Sun received her PhD in engineering from the National University of Singapore in 2012. She is currently an associate professor at the Faculty of Materials Science and Chemistry, China University of Geosciences (Wuhan). Her research interests focus on novel functional materials for semiconductor devices and energy storage systems.

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40843_2023_2730_MOESM1_ESM.pdf

Super high-speed self-powered photodetector based on solution-processed transparent p-type amorphous phosphorous-doped SnO film

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Xu, L., Qin, L., Huang, Y. et al. Super high-speed self-powered photodetector based on solution-processed transparent p-type amorphous phosphorous-doped SnO film. Sci. China Mater. 67, 690–697 (2024). https://doi.org/10.1007/s40843-023-2730-5

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  • DOI: https://doi.org/10.1007/s40843-023-2730-5

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