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FinFETs based on layered 2D semiconductors

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Authors and Affiliations

  1. Institute for Microelectronics, TUWien, Gusshausstrasse 27-29, 1040, Vienna, Austria

    Theresia Knobloch & Tibor Grasser

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  1. Theresia Knobloch
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  2. Tibor Grasser
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Correspondence to Tibor Grasser.

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Knobloch, T., Grasser, T. FinFETs based on layered 2D semiconductors. Sci. China Mater. 66, 3759–3760 (2023). https://doi.org/10.1007/s40843-023-2528-9

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  • DOI: https://doi.org/10.1007/s40843-023-2528-9

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