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High-performance near-infrared PtSe2/n-Ge heterojunction photodetector with ultrathin Al2O3 passivation interlayer

具有超薄Al2O3钝化层的高性能近红外PtSe2/n-Ge异质结光电探测器

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Abstract

Two-dimensional (2D) materials are being intensively exploited for broadband-responsive photodetectors (PDs). However, the broadband-responsive PDs based on 2D materials normally suffer from poor response to infrared wavelengths. Here, we report the excellent photoresponse performance of vertical PtSe2/ultrathin Al2O3/Ge PD under near-infrared illumination. We directly selenize Pt film deposited on Al2O3/Ge to form PtSe2 layer. The ultrathin Al2O3 passivation layer plays the role of surface modification, effectively weakening recombination of the photogenerated carriers. Under 1550-nm illumination, the PtSe2/ultrathin Al2O3/Ge PD with a working area of 50 µm × 50 µm at zero bias obtains a large responsivity of 4.09 A W−1, and fast rise/fall times of 32.6/18.9 µs, respectively. And under an external electric field of −5 V, the responsivity and response speed of the PtSe2/ultrathin Al2O3/Ge PD can be as high as 38.18 A W−1 and as fast as 9.6/7.7 µs, respectively. We find that the working area has a great influence on the photoresponse characteristics. Furthermore, we demonstrate the PtSe2/ultrathin Al2O3/Ge PDs array shows outstanding violet, visible, and infrared imaging capability at room temperature. Our study suggests that the PtSe2/ultrathin Al2O3/Ge heterojunction has great application prospects for the design of emerging broadband optoelectronic devices with superior performance for near-infrared response.

摘要

二维(2D)材料正被广泛用于宽带响应光电探测器(PD). 然而, 基于2D材料的宽带响应PD通常对红外波长的响应较差. 在此, 我们报告了垂直PtSe2/超薄Al2O3/Ge PD在近红外照明下的优异光响应性能. 我们直接硒化沉积在Al2O3/Ge上的Pt膜以形成PtSe2层. 超薄Al2O3钝化层起到表面改性的作用, 有效地削弱了光生载流子的复合. 在1550 nm的光照下, 我们的PtSe2/超薄Al2O3/Ge PD的工作面积为50 µm × 50 µm, 并在零偏压下获得了4.09 A W−1、 32.6/18.9 µs的大响应度和快速上升/下降时间. 在−5 V的外加电压下, PtSe2/超薄Al2O3/Ge PD的响应度和响应速度分别高达38.18 A W−1和9.6/7.7 µs. 我们发现器件的工作面积对光响应特性有很大的影响. 此外, 我们证明PtSe2/超薄Al2O3/Ge PD阵列在室温下显示出了优异的紫外、 可见光和红外成像能力. 我们的研究表明, PtSe2/超薄Al2O3/Ge异质结在设计具有优异近红外响应性能的新兴宽带光电子器件方面具有巨大的应用前景.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (62090030/62090031, 51872257, 51672244, and 62274145), the National Key R & D Program of China (2021YFA1200502), the Natural Science Foundation of Zhejiang Province (LZ20F040001), and Zhejiang Province Key R & D programs (2020C01120). The authors would like to acknowledge the support of Jiabao Sun, Meifang Wang, and Ying Sun from ZJU Micro-Nano Fabrication Center, Zhejiang University. We also thank Lu Cao, Chao Bi, Xiaoli Hong, and Zhaoxiaonan Liu from the Core Facilities, Zhejiang University School of Medicine for their technical support.

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Authors and Affiliations

  1. School of Micro-Nano Electronics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China

    Qinghai Zhu  (朱清海), Yexin Chen  (陈叶馨), Zhiyuan Cheng  (程志渊) & Mingsheng Xu  (徐明生)

  2. State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China

    Xiaodong Zhu  (朱笑东)

  3. College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou, 310027, China

    Yijun Sun  (孙一军)

  4. Key Laboratory of Ocean Observation-Imaging Testbed of Zhejiang Province, Ocean College, Zhejiang University, Zhoushan, 316021, China

    Jing Xu  (徐敬)

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  1. Qinghai Zhu  (朱清海)
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  2. Yexin Chen  (陈叶馨)
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  6. Jing Xu  (徐敬)
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  7. Mingsheng Xu  (徐明生)
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Contributions

Author contributions Zhu Q and Xu M conceived the idea and designed the experiments. Zhu Q performed the experiments with the assistance of Chen Y, Sun Y, Cheng Z, and Xu J. Zhu Q and Xu M analyzed the data. Zhu Q and Xu M co-wrote the manuscript. All authors discussed the results.

Corresponding authors

Correspondence to Jing Xu  (徐敬) or Mingsheng Xu  (徐明生).

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Conflict of interest The authors declare that they have no conflict of interest.

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Supplementary information Supporting data are available in the online version of the paper.

Qinghai Zhu received his Bachelor’s degree from Hunan University, China. He is currently a graduate student at the School of Micro-nano Electronics, Zhejiang University, China. His main research interest focuses on photo-detectors and optoelectronic devices based on 2D materials.

Jing Xu is a professor at the Ocean College, Zhejiang University. His research is focused on underwater wireless optical communications.

Mingsheng Xu is a full professor at the School of Micro-Nano Electronics/College of Information Science and Electronic Engineering, Zhejiang University. He earned his PhD degree from the Department of Electronic Engineering, The Chinese University of Hong Kong. His current main research includes 2D materials and devices.

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Zhu, Q., Chen, Y., Zhu, X. et al. High-performance near-infrared PtSe2/n-Ge heterojunction photodetector with ultrathin Al2O3 passivation interlayer. Sci. China Mater. 66, 2777–2787 (2023). https://doi.org/10.1007/s40843-022-2402-3

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