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Efficient ion-slicing of 4-inch GaAs thin film for Si-based hetero-integration with ultra-smooth surface

用于制备具有超光滑表面异质集成4英寸硅基砷化镓薄膜的高效离子剥离技术

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Abstract

Heterogeneous integration of single-crystalline GaAs thin film on a Si substrate provides a promising material platform for Si-based optoelectronic integration. In this work, based on the clarified splitting mechanism of GaAs, the ion implantation conditions for GaAs film transfer were optimized. It was found that the co-implantation of He and H ions is more efficient in exfoliating the GaAs thin film with a lower thermal budget and lower density of defects in comparison with the case of the single He/H ion implantation. With the Al2O3 as the bonding intermediate layer, a 4-inch GaAs film was successfully transferred onto the Si (100) substrate via the optimized ion-slicing technique. The surface treatments, including chemical mechanical polishing, ozone oxidation, and KOH cleaning, were explored to improve the surface quality of the as-transferred GaAs thin film to the level of epi-ready. After post-annealing at 400°C for 1 h, the quality of the transferred GaAs thin film was further improved with only 89.03 arcsec for the full width at half maximum of the X-ray rocking curve.

摘要

在Si衬底上将单晶GaAs薄膜与其进行异质集成有望为硅基光电 集成提供新的材料平台. 本文基于对GaAs材料剥离机理的分析阐述, 优 化了GaAs薄膜转移工艺的离子注入条件. 结果表明, 相比于He离子单 独注入, 由于较小的热预算和注入后相对更低的缺陷密度, He/H离子 共注入对于GaAs薄膜转移更高效. 以Al2O3为键合介质层, 通过优化的 离子剥离技术成功地将4英寸GaAs薄膜转移到Si(100)衬底上. 探索了包 括化学机械抛光、臭氧辐照氧化和KOH清洗的表面处理工艺, 以将转 移后GaAs薄膜的表面质量提高到可以高质量外延的水平. 在400°C退 火1 h后, 转移的GaAs薄膜单晶质量进一步提高, X射线摇摆曲线的半 峰全宽仅为89.03 arcsec.

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Acknowledgements

This work was supported by the National Key R&D Program of China (2017YFE0131300), the National Natural Science Foundation of China (62174167, 61874128), the Frontier Science Key Program of CAS (QYZDY-SSW-JSC032), the Key Research Project of Zhejiang Laboratory (2021MD0AC01), the Program of Shanghai Academic Research Leader (19XD1404600), K.C. Wong Education Foundation (GJTD-2019-11), and NCBiR within the Polish-China (WPC/130/NIR-Si/2018).

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  1. These authors contributed equally to this work.

Authors and Affiliations

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

    Jialiang Sun  (孙嘉良), Tingting Jin  (金婷婷), Chaodan Chi  (池超旦), Min Zhou  (周民), Tiangui You  (游天桂) & Xin Ou  (欧欣)

  2. University of Chinese Academy of Sciences, Beijing, 100049, China

    Jialiang Sun  (孙嘉良), Tingting Jin  (金婷婷), Tiangui You  (游天桂) & Xin Ou  (欧欣)

  3. College of Information Science and Engineering, Jiaxing University, Jiaxing, 314001, China

    Jiajie Lin  (林家杰)

  4. Jiaxing Key Laboratory of Plasma and Ion Beam Technology, Jiaxing, 314100, China

    Jiajie Lin  (林家杰)

  5. Department of Semiconductor Materials Engineering, Wroclaw University of Science and Technology, Wroclaw, 50-370, Poland

    Robert Kudrawiec

  6. Beijing Semicore ZKX Electronics Equipment Co., Ltd., Beijing, 100176, China

    Jin Li  (李进)

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  1. Jialiang Sun  (孙嘉良)
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  7. Jin Li  (李进)
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  8. Tiangui You  (游天桂)
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  9. Xin Ou  (欧欣)
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Contributions

Sun J participated in material preparation and data analysis, designed the experiments, and drafted the manuscript. Lin J conceived this research, analyzed the data, and co-wrote the paper. You T and Ou X participated in writing-review, editing, and supervision. All the authors contributed to the general discussion.

Corresponding authors

Correspondence to Jiajie Lin  (林家杰), Tiangui You  (游天桂) or Xin Ou  (欧欣).

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Conflict of interest

The authors declare that they have no conflict of interest.

Jialiang Sun is a PhD student at Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, under Prof. Ou’s supervision. His interest focuses on the heterogeneous integration of III-V materials and devices.

Jiajie Lin received his PhD degree from SIMIT, Chinese Academy of Sciences in 2020. Now he is a lecturer at Jiaxing University. His current research interest focuses on the fabrication and application of heterogeneous materials in ion-slicing technique.

Tiangui You received his PhD degree from Technische Universität Chemnitz, Germany in 2016. Then he joined SIMIT, Chinese Academy of Sciences as an assistant professor, and he was promoted to be professor in 2020. His current research interests include the heterogeneous integration materials and devices.

Xin Ou received his PhD degree in microelectronics and solid-state electronics from SIMIT, Chinese Academy of Sciences in 2010. After that he worked at Helmholtz Zentrum Dresden Rossendorf in Germany until 2014 when he joined SIMIT as a professor. He has authored more than 120 SCI papers and been authorized 69 patents. His current research interests include the hetero-integration of functional materials for high-performance electrical, optical and acoustical devices.

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Sun, J., Lin, J., Jin, T. et al. Efficient ion-slicing of 4-inch GaAs thin film for Si-based hetero-integration with ultra-smooth surface. Sci. China Mater. 66, 211–218 (2023). https://doi.org/10.1007/s40843-022-2135-y

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