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Hybrid 1D/2D heterostructure with electronic structure engineering toward high-sensitivity and polarization-dependent photodetector

混合1D/2D异质结构耦合电子结构工程用于高灵敏度和偏振依赖的光电探测器

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Abstract

The widespread application of photodetectors has triggered an urgent need for high-sensitivity and polarization-dependent photodetection. In this field, the two-dimensional (2D) tungsten disulfide (WS2) exhibits intriguing optical and electronic properties, making it an attractive photosensitive material for optoelectronic applications. However, the lack of an effective built-in electric field and photoconductive gain mechanism in 2D WS2 impedes its application in high-performance photodetectors. Herein, we propose a hybrid heterostructure photodetector that contains 1D Te and 2D WS2. In this device, 1D Te induces in-plane strain in 2D WS2, which regulates the electronic structures of local WS2 and gives rise to type-II band alignment in the horizontal direction. Moreover, the vertical heterojunction built of 2D WS2 and 1D Te introduces a high photoconductive gain. Benefiting from these two effects, the transfer of photogenerated carriers is optimized, and the proposed photodetector exhibits high sensitivity (photoresponsivity of ~27.7 A W−1, detectivity of 9.5 × 1012 Jones, and short rise/decay time of 19.3/17.6 ms). In addition, anisotropic photodetection characteristics with a dichroic ratio up to 2.1 are achieved. This hybrid 1D/2D heterostructure overcomes the inherent limitations of each material and realizes novel properties, opening up a new avenue towards constructing multifunctional optoelectronic devices.

摘要

随着光电探测器的广泛应用, 人们迫切需要高灵敏度、偏振依 赖的光电探测技术. 在这一领域, 二维二硫化钨(2D WS2)表现出出色的 光学和电子特性, 使其成为一种在光电应用领域有吸引力的光敏材料. 但是, 2D WS2缺乏有效的内建电场和光电导增益机制, 阻碍了其在高 性能光电探测器中的应用. 在此, 我们提出了一种包含1D Te和2D WS2 的混合异质结构光电探测器. 在该器件中, 二维WS2在1D Te上产生平 面内形态应变, 该应变能调节WS2的局部电子结构, 并在水平方向上形 成II型能带排列. 此外, 2D WS2和1D Te的垂直异质结引入了光电导增 益. 这两种效应优化了光致载流子的转移, 使得光电探测器具有较高的 灵敏度(光响应度为~27.7 A W−1, 探测度为9.5 × 1012 Jones, 上升/衰减 时间为19.3/17.6 ms). 此外, 该器件还获得了各向异性的光电探测特性, 其二向色比可达2.1. 这种混合的1D/2D异质结构克服了单种材料固有 的局限性, 实现了新的性能, 为构建多功能光电器件开辟了新的途径.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (61805044, 62004071 and 11674310), the Key Platforms and Research Projects of Department of Education of Guangdong Province (2018KTSCX050), Guangdong Provincial Key Laboratory of Information Photonics Technology (2020B121201011), and “The Pearl River Talent Recruitment Program” (2019ZT08X639). The authors thank Lin Liu from the State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University for the device constructing.

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Authors and Affiliations

  1. Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China

    Yuchen Zhou  (周瑜琛), Lixiang Han  (韩理想), Qiqi Song  (宋琦琦), Mengmeng Yang  (杨孟孟), Zhaoqiang Zheng  (郑照强) & Le Huang  (黄乐)

  2. Institute of Semiconductors, South China Normal University, Guangzhou, 510631, China

    Wei Gao  (高伟) & Jingbo Li  (李京波)

  3. State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yatsen University, Guangzhou, 510275, China

    Jiandong Yao  (姚健东)

  4. Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, China

    Jingbo Li  (李京波)

  5. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

    Jingbo Li  (李京波)

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  1. Yuchen Zhou  (周瑜琛)
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Contributions

Zheng Z and Li J designed the project and the experiment. Zhou Y performed the main experiments and wrote this manuscript. Han L, Song Q and Gao W completed the rest of the experiment and helped write this manuscript. The other authors helped to analyze the data, discussed the results and contributed to the theoretical analysis. All authors contributed to the general discussion.

Corresponding authors

Correspondence to Zhaoqiang Zheng  (郑照强) or Jingbo Li  (李京波).

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Conflict of interest

The authors declare that they have no conflict of interest.

Supplementary information

Experimental details and supporting data are available in the online version of the paper.

Yuchen Zhou is a master degree candidate at the school of Materials and Energy, Guangdong University of Technology. He received his BSc degree from Guilin University of Electronic Technology in 2019. His current research focuses on designing intelligent 2D material devices for photodetection applications.

Zhaoqiang Zheng received his BSc degree from Hunan University (2011) and PhD degree from Sun Yat-sen University (2017). Then, he joined the School of Materials and Energy, Guangdong University of Technology and currently is an associate professor. His research interests are the design, synthesis and photodetection applications of novel 2D materials and their heterostructures.

Jingbo Li received his PhD degree from the Institute of Semiconductors, Chinese Academy of Sciences (2001). Then, he spent six years at Lawrence Berkeley National Laboratory. From 2007 to 2019, he worked as a professor at the Institute of Semiconductors, Chinese Academy of Sciences. Since 2019, he has been a professor and the dean of Institute of Semiconductors, South China Normal University. His research interests include the design, fabrication, and application of novel nanostructured semiconductors.

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Hybrid 1D/2D heterostructure with electronic structure engineering toward high-sensitivity and polarization-dependent photodetector

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Zhou, Y., Han, L., Song, Q. et al. Hybrid 1D/2D heterostructure with electronic structure engineering toward high-sensitivity and polarization-dependent photodetector. Sci. China Mater. 65, 732–740 (2022). https://doi.org/10.1007/s40843-021-1847-7

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