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Polarization-tunable nonlinear absorption patterns from saturated absorption to reverse saturated absorption in anisotropic GeS flake and an application of all-optical switching

各向异性硫化锗薄片从饱和吸收到反饱和吸收的 偏振可调非线性吸收模式及其在全光开关中的应 用

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Abstract

Due to the unique anisotropic chemical and physical properties, two-dimensional (2D) layered materials, such as IV-VI monochalcogenides with puckered honeycomb structure, have received considerable interest recently. Among the IV-VI layered MX (M = Ge, Sn; X = Se, S) compounds, germanium sulfide (GeS) stands out for its strongest anisotropic thermal conductivities and figure-of-merit values. Additionally, the layer-independent direct energy bands (Eg ∼1.6 eV, E1 ∼2.1 eV) of GeS flake provide excellent insights into further applications as visible photodetectors. Herein, the polarization-tunable nonlinear absorption (NA) patterns of GeS flake have been systematically investigated. Specifically, both the polarization-dependent Raman spectroscopy and the linear absorption (LA) spectroscopy were employed to characterize the lattice orientation and absorption edges of the 251-nm GeS flake. Considering the low damage threshold of GeS flake, the GeS/graphene heterostructure was fabricated to increase the threshold without changing the nonlinear properties of GeS. Our NA results demonstrated that a 600-nm femtosecond laser with different polarizations would excite the saturated-absorption (SA) effect along armchair and reverse-saturated-absorption (RSA) effect along zigzag in the GeS/graphene heterostructure. Moreover, the function of the polarization-based GeS/graphene heterostructure all-optical switch was experimentally verified. Notably, thanks to the polarization-dependent NA patterns (SA/RSA) of GeS, the “ON” and “OFF” states of the all-optical switch can be accomplished by high and low transmittance states of continuous-wave laser (532 nm, 80 nW), whose state can be controlled by the polarization of femtosecond switching laser (600 nm, 35 fs, 500 Hz, 12 GW cm−2). The ON/OFF ratio can achieve up to 17% by changing polarization, compared with the ratios of 3.0% by increasing the incident power of switching light in our experiment. The polarization-tunable absorption patterns introduced in this work open up real perspectives for the next-generation optoelectronic devices based on GeS/graphene heterostructure.

摘要

近年来, 一些二维层状材料, 尤其是具有褶皱蜂窝结构的IVVI 族单硫化物, 由于其特殊的各向异性化学和物理性质, 而备受关 注. 在IV-VI族层状化合物MX (M=Ge, Sn; X=Se, S)中, 硫化锗(GeS) 以其最强的各向异性热导率和热电品质因子而引人注目. 此外, GeS薄片与层数无关的直接能带(Eg∼1.6 eV, E1∼.1 eV)为可见光光 探测器的应用提供了良好的应用前景. 本文研究了GeS薄片的偏振 可调非线性吸收模式, 利用偏振相关拉曼光谱和线性吸收光谱表 征了厚度为251 nm GeS的晶格取向和吸收能带. 考虑到GeS薄片的 较低的热损伤阈值, 在不改变GeS非线性特性的前提下, 制备了硫 化锗/石墨烯异质结. 非线性吸收结果表明, 在硫化锗/石墨烯异质 结中, 利用偏振可调的600 nm线偏振飞秒激光沿扶手椅方向激发 产生饱和吸收(SA)效应, 沿锯齿方向激发反饱和吸收(RSA)效应. 实验验证了基于偏振的硫化锗/石墨烯异质结全光开关的功能. 值 得注意的是, 正因为GeS的偏振相关非线性吸收模式(SA/RSA), 全 光开关的“开”、“关”状态可通过控制飞秒开关激光(600 nm, 35 fs, 500 Hz, 12 GW cm−2)的偏振, 进而改变连续光(CW)激光(532 nm, 80 nW)透射率的方式来实现. 通过改变开关光的偏振, 开关比可以 达到17%, 与之相比, 通过提高开关光入射功率获得的开关比仅为 3.0%. 本文介绍的偏振可调吸收模式, 为基于硫化锗/石墨烯异质结 的下一代光电子器件开辟了新的前景.

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Acknowledgements

The authors are grateful for financial support from the National Natural Science Foundation of China (11802339, 11805276, 61805282, 61801498, 11804387, and 11902358), the Scientific Researches Foundation of National University of Defense Technology (ZK16-03-59, ZK18-01-03, ZK18-03-36, and ZK18-03-22), the Natural Science Foundation of Hunan province (2016JJ1021), the Open Director Fund of State Key Laboratory of Pulsed Power Laser Technology (SKL2018ZR05), the Open Research Fund of Hunan Provincial Key Laboratory of High Energy Technology (GNJGJS03), the Opening Foundation of State Key Laboratory of Laser Interaction with Matter (SKLLIM1702), and the Youth Talent Lifting Project (17-JCJQ-QT-004).

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  1. These authors contributed equally to this work.

Authors and Affiliations

  1. College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China

    Hao Ouyang  (欧阳昊), Chenxi Zhang  (张晨希), Qirui Liu  (刘祺瑞), Siyang Hu  (胡思扬), Xiang’ai Cheng  (程湘爱) & Tian Jiang  (江天)

  2. State Key Laboratory of Pulsed Power Laser Technology, Changsha, 410073, China

    Hao Ouyang  (欧阳昊) & Xiang’ai Cheng  (程湘爱)

  3. Hunan Provincial Key Laboratory of High Energy Laser Technology, Changsha, 410073, China

    Hao Ouyang  (欧阳昊) & Xiang’ai Cheng  (程湘爱)

  4. College of Computer, National University of Defense Technology, Changsha, 410073, China

    Jun Zhang  (张峻) & Hao Hao  (郝昊)

  5. National Innovation Institute of Defense Technology, Beijing, 100010, China

    Jie You  (尤洁)

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Contributions

Jiang T proposed and designed the project. Ouyang H, Zhang C and Liu Q contributed equally to this work on fabricating the samples, conducting the experiments, analyzing the data and writing the paper. Hu S, Zhang J, Hao H, You J and Cheng X participated in the experiments, writing the paper and revising the manuscript. All authors contributed to the general discussion.

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Correspondence to Tian Jiang  (江天).

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Conflict of interest

The authors declare that they have no conflict of interest.

Hao Ouyang received his BSc degree from the National University of Defence Technology in 2018. Currently, he is a graduate student in the group of Prof. Tian Jiang at the National University of Defence Technology. His research interest mainly focuses on nonlinear optic laser and materials interaction.

Chenxi Zhang is a postgraduate student under the guidance of Prof. Tian Jiang at the National University of Defense Technology. She received her BSc degree in photoelectric information science and engineering from the University of Science and Technology of China in 2018. Her current research focuses on the optical nonlinear properties of 2D materials and their applications in all-optical devices.

Qirui Liu received his BSc degree from Army Engineering University in 2018. Currently, he is a graduate student in the group of Prof. Tian Jiang at the National University of Defence Technology. His research interest concentrates on the field of nonlinear optics and ultrafast spectroscopy.

Tian Jiang is a professor at the College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, China. He is a well-known researcher in the field of light-matter interactions in condensed matter physics. His research interests include topological insulators, ultrafast dynamics of energy relaxation, spintronics, and radiative recombination of quasi-particles in transition metal dichalcogenides (TMDCs), black phosphorus and other low-dimensional materials.

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Ouyang, H., Zhang, C., Liu, Q. et al. Polarization-tunable nonlinear absorption patterns from saturated absorption to reverse saturated absorption in anisotropic GeS flake and an application of all-optical switching. Sci. China Mater. 63, 1489–1502 (2020). https://doi.org/10.1007/s40843-020-1289-7

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