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Optical property and lasing of GaAs-based nanowires

GaAs基纳米线的光学性质和激射

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Abstract

GaAs-based nanowire (NW) lasers working in the infrared region is critical in integrated optoelectronics. In the past few decades, the field of NW lasers has developed rapidly. Compared with materials working in the ultraviolet and visible ranges, GaAs-based infrared NW lasers, however, are more difficult to achieve because of their specific properties. In this review, we focus on the recent developments of GaAs-based NWs, more especially, the optical property and lasing of GaAs-based NWs. The growth mechanism of GaAs NWs is introduced in detail, including the crystal phase control and the growth of complex structures. Subsequently, the influence and improvement of the optical properties of GaAs-based NWs are introduced and discussed. Finally, the design and latest progress of GaAs-based NW lasers are put forward.

摘要

工作在红外波段的砷化镓(GaAs)基纳米线激光器在集成光电子学中起着重要作用. 在过去的十几年中, 纳米线激光器领域发展迅速, 但是与工作在紫外和可见波段的材料相比, 由于GaAs基材料的特性, 近红外激光器的实现相对困难. 在本文中, 我们着重介绍了GaAs基纳米线的最新进展, 特别是GaAs纳米线的光学性质和激射特性. 详细介绍了GaAs纳米线的生长机理, 包括晶相控制和复杂结构的生长.回顾并讨论了GaAs基纳米线的光学性质的影响因素和改进方法. 最后, 展示了GaAs基纳米线激光器的设计及其最新 进展.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (61574022, 61674021, 61704011, 61904017, 111674038, 1404219, and 11574130), the Foundation of NANO X (No. 18JG01). Chen R acknowledges the funding support from Shenzhen Science and Technology Innovation Commission (JCYJ20180305180553701, KQJSCX20170726145748, and KQTD2015071710313656).

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Author notes

  1. These authors contributed equally to this work.

Authors and Affiliations

  1. State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, Changchun, 130022, China

    Haolin Li  (李浩林) & Zhipeng Wei  (魏志鹏)

  2. Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Guangdong, 518055, China

    Haolin Li  (李浩林), Yuting Chen  (陈宇婷) & Rui Chen  (陈锐)

Authors
  1. Haolin Li  (李浩林)
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  2. Yuting Chen  (陈宇婷)
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  3. Zhipeng Wei  (魏志鹏)
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  4. Rui Chen  (陈锐)
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Contributions

This paper was written with contributions from all authors. All authors have given approval to the final version of the paper.

Corresponding authors

Correspondence to Zhipeng Wei  (魏志鹏) or Rui Chen  (陈锐).

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Conflict of interest

The authors declare that they have no conflict of interest.

Haolin Li received his BE degree in electronic science and technology from Changchun University of Science and Technology in 2016. He is currently pursuing a PhD degree in electronic science and technology under the supervision of Prof. Zhipeng Wei at Changchun University of Science and Technology. His current interests include the optical properties of semiconductor nanomaterials and their applications.

Yuting Chen is currently pursuing a BE degree in optoelectronic information science and engineering under the supervision of Prof. Rui Chen at Southern University of Science and Technology. Her current interest focuses on ul-trafast carrier dynamics.

Zhipeng Wei received his PhD degree in condensed matter physics from Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences. He is currently working at the State Key Laboratory of High Power Semiconductor Laser in Changchun University of Science and Technology. His research interests include the optoelectronic properties of low dimensional semiconductors and their applications.

Rui Chen received his PhD degree in applied physics from Nanyang Technological University, and physics from Xiamen University. He is currently working at the Department of Electrical and Electronic Engineering at Southern University of Science and Technology. His research interests include the laser spectroscopy, optical properties of materials, optical microcavity and micro/nano lasers.

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Li, H., Chen, Y., Wei, Z. et al. Optical property and lasing of GaAs-based nanowires. Sci. China Mater. 63, 1364–1381 (2020). https://doi.org/10.1007/s40843-020-1288-6

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  • DOI: https://doi.org/10.1007/s40843-020-1288-6

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