Abstract
A simple self-catalyzed chemical vapor deposition process was conducted to synthesize single-crystalline GaSb nanowires, where Ga droplets were utilized as the catalysts. The as-grown GaSb nanowires exhibited typical p-type semiconductor behavior with the calculated hole mobility of about 0.042 cm2 V−1 s−1 The photoresponse properties of the GaSb nanowires were studied by fabricating nanowire photodetectors on both rigid and flexible substrates. The results revealed that the photodetectors exhibited broad spectral response ranging from ultraviolet, visible, to near infrared region. For the device on rigid substrate, the corresponding responsivity and the detectivity were calculated to be 3.86×103A W−1 and 3.15×1013 Jones for 500 nm light, and 7.22×102A W−1 and 5.90×1012 Jones for 808 nm light, respectively, which were the highest value compared with those of other reported Ga1−xInxAsySb1−y structure nanowires. Besides, the flexible photodetectors not only maintained the comparable good photoresponse properties as the rigid one, but also possessed excellent mechanical flexibility and stability. This study could facilitate the understanding on the fundamental characteristics of self-catalyzed grown GaSb nanowires and the design of functional nano-optoelectronic devices based on Gasb nanowires.
摘要
本文应用镓金属液滴作为催化剂, 采用化学气相沉积方法自催化合成了单晶GaSb纳米线. 研究表明该GaSb纳米线为典型的p型半导体, 霍尔迁移率为> 0.042 cm2 V−1 s−1. 硅基和柔性衬底上构筑的基于GaSb纳米线的光电探测器, 具有良好的紫外-可见-近红外宽光谱探测性能. 硅基器件对5 0 0 nm的可见光响应率可达3.86×103 A W−1, 探测率可达3.15×1013 Jones; 柔性器件在保持相似光电性能的同时, 具有极好的机械柔韧性和稳定性. 本文有助于更好地揭示自催化生长的GaSb纳米线的性能, 并为进一步设计基于GaSb纳米线的功能光电器件打下了实验基础.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (61574132 and 61625404).
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Author contributions Zhang K and Shen G designed the devices and experiments; Zhang K performed the experiments; Zhang K, Chai R, Shi R, and Lou Z analyzed the data; Zhang K wrote the paper with support from Shen G. All authors contributed to the general discussion.
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Kai Zhang received his PhD degree from the Institute of Semiconductors, Chinese Academy of Sciences in 2018. He joined Hebei University as an assistant professor in 2018. His current research focuses on low dimensional semiconductor electronics, including transistors, photodetectors, photovoltaic and lasers.
Guozhen Shen received his BSc degree in 1999 from Anhui Normal University and PhD degree in 2003 from the University of Science and Technology of China. From 2004 to 2013, he conducted his research in Hanyang University (Korea), National Institute for Materials Science (Japan), University of Southern California (USA) and Huazhong University of Science and technology (China). He joined the Institute of Semiconductors, Chinese Academy of Sciences as a professor in 2013. His current research focuses on flexible electronics and printable electronics, including transistors, photodetectors, sensors and flexible energy-storage devices.
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Zhang, K., Chai, R., Shi, R. et al. Self-catalyzed growth of GaSb nanowires for high performance ultraviolet-visible-near infrared photodetectors. Sci. China Mater. 63, 383–391 (2020). https://doi.org/10.1007/s40843-019-1189-7
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DOI: https://doi.org/10.1007/s40843-019-1189-7