Abstract
The effect of tert-butyl hydroperoxide-sodium pyrosulfite ((CH3)3COOH-Na2S2O5) as an initiator system in H2O2-based slurry was investigated for the abrasive-free polishing (AFP) of a hard disk substrate. The polishing results show that the H2O2-C4H10O2-Na2S2O5 slurry exhibits a material removal rate (MRR) that is nearly 5 times higher than that of the H2O2 slurry in the AFP of the hard disk substrate. In addition, the surface polished by the slurry containing the initiator exhibits a lower surface roughness and has fewer nano-asperity peaks than that of the H2O2 slurry. Further, we investigate the polishing mechanism of H2O2-C4H10O2-Na2S2O5 slurry. Electron spin-resonance spectroscopy and auger electron spectrometer analyses show that the oxidizing ability of the H2O2-C4H10O2-Na2S2O5 slurry is much greater than that of the H2O2 slurry. The results of potentiodynamic polarization measurements show that the hard disk substrate in the H2O2-C4H10O2-Na2S2O5 slurry can be rapidly etched, and electrochemical impedance spectroscopy analysis indicates that the oxide film of the hard disk substrate formed in the H2O2-C4H10O2-Na2S2O5 slurry may be loose, and can be removed easily during polishing. The better oxidizing and etching ability of H2O2-C4H10O2-Na2S2O5 slurry leads to a higher MRR in AFP for hard disk substrates.
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Zhang W, Lu X C, Liu Y H, Pan G S, Luo J B. Effect of pH on material removal rate of Cu in abrasive-free polishing. J Electrochem Soc156(3): 176–180 (2009)
He X L, Chen Y Y, Zhao H J, Sun H M, Lu X C, Liang H. Y2O3 nanosheets as slurry abrasives for chemical-mechanical planarization of copper. Friction, DOI 10.1007/s40544-013-0017-z, in press (2013)
Lei H, Bu N J, Chen R L, Hao P, Neng S M, Tu X F, Yuen K. Chemical mechanical polishing of hard disk substrate with α-alumina-g-polystyrene sulfonic acid composite abrasive. Thin Solid films518: 3792–3796 (2010)
Balakumar S, Haque T, Senthil Kumar A, Rahman M, Kumar R. Wear phenomena in abrasive-free copper CMP process. J Electrochem Soc152(11): 867–874 (2005)
Kim H J, Jang Y J, Choi J W, Kown B, Lee K, Ko Y S. Tribological approaches to material removal rate during chemical mechanical polishing. Met Mater Int19(2): 335–339 (2013)
Lei H, Zhang P Z, Lu H S. Sub-nanometer precision polishing of glass substrate with a colloidal SiO2 slurry. Lubr Eng137 (1): 31–34 (2006)
Pandija S, Roy D, Badu S V. Chemical mechanical planarization of copper using abrasive-free solutions of oxalic acid and hydrogen peroxide. Mater Chem Phys102: 144–151 (2007)
Hao P, Lei H, Chen R L. Cerium-incorporated SBA-15-type materials for CMP: Synthesis, characterization and CMP application on hard disk substrate. Int J Abras Tech4(3): 255–265 (2011)
Lei H, Zhang P Z. Preparation of alumina/silica core-shell abrasives and their CMP behavior. Appl Surf Sci253: 8754–8761 (2007)
Kondo S, Sakuma N, Homma Y, Goto Y, Ohashi N, Yamaguchi H, Owada N. Abrasive-free polishing for copper damascene interconnection. J Electrochem Soc147(10): 3907–3913 (2000)
Hayashi Y, Kikuta K, Kikkawa T. A new abrasive-free, chemical mechanical polishing technique for aluminum metallization of ULSI devices. In Proceedings of IEEE International Electron Devices Meeting, San Francisco, CA, USA, 1992: 976–978.
Hayashi S, Koga T, Goorsky M S. Chemical mechanical polishing of GaN. J Electrochem Soc155(2): 113–116 (2008)
Hara H, Sano Y, Mimura H, Arima K, Kubota A, Yagi K, Murata J, Yamauchi K. Novel abrasive-free planarization of Si and SiC using catalyst. In 11th ICPE, Tokyo, Japan, 2006: 267–270.
Lei H, Jiang L, Chen R L. Preparation of copper-incorporated mesoporous alumina abrasive and its CMP behavior on hard disk substrate. Power Tech219: 99–104 (2012)
Zhang W T, Lei H. Abrasive-free polishing of hard disk substrate with H2O2-K2S2O8-NaHSO3 slurry. Adv Mater Res690–693: 3209–3212 (2013)
Zhao R, Lei H. Effect of K2S2O8 on material removal rate in abrasive-free polishing of hard disk substrate. Adv Mater Res690–693: 3222–3225 (2013)
Wang Z J, Lei H, Zhang W T, Zhao R. Cu (II) as a catalyst for hydrogen peroxide system abrasive-free polishing on hard disk substrate. Key Eng Mater562–565: 91–95 (2013)
Chen S S, Lei H, Chen R L. Effect of pH on hard disk substrate polishing in glycine-hydrogen peroxide system abrasive-free slurry. Key Eng Mater562–565: 691–696 (2013)
He H W, Hu Y H, Zhou K Z, Xiong X. Corrosion and passivation of copper in the CMP slurry of CH3NH2-K3[Fe(CN)6] (in Chinese). J Func Mater35(3): 392–394 (2004)
Lu J W. Advanced Electron Paramagnetic Resonance Spectroscopy and Its Applications. Beijing (China): Peking University medical press, 2012.
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Weitao ZHANG. He received his Bachelor degree in material chemistry in 2008 from Harbin Institute of Technology University, Harbin, China. Now, he is a Master candidate in the Research Center of Nano-Science and Nano-Technology, Shanghai University. His research interest is chemical mechanical polishing.
Hong LEI. He received his MS and PhD degrees in applied chemistry from Huazhong University of Science and Technology in 1996 and 2001, respectively. He joined Shanghai University from 2003. His current position is a professor in the Research Center of Nano-Science and Nano-Technology, Shanghai University. His research interests include functional abrasives, CMP slurry, and post-CMP cleaning.
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Zhang, W., Lei, H. Abrasive-free polishing of hard disk substrate with H2O2-C4H10O2-Na2S2O5 slurry. Friction 1, 359–366 (2013). https://doi.org/10.1007/s40544-013-0032-0
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DOI: https://doi.org/10.1007/s40544-013-0032-0