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Maskless Lithography Using Negative Photoresist Material: Impact of UV Laser Intensity on the Cured Line Width

  • Mohammed Ziauddin Mohammed
  • Abdel-Hamid I. Mourad
  • Saud A. Khashan
Article
  • 57 Downloads

Abstract

The application of maskless lithography technique on negative photoresist material is investigated in this study. The equipment used in this work is designed and built especially for maskless lithography applications. The UV laser of 405 nm wavelength with 0.85 Numerical Aperture is selected for direct laser writing. All the samples are prepared on a glass substrate. Samples are tested at different UV laser intensities and different stage velocities in order to study the impact on patterned line width. Three cases of spin coated layers of thickness 90 μm, 40 μm, and 28 μm on the substrate are studied. The experimental results show that line width has a generally increasing trend with intensity. However, a decreasing trend was observed for increasing velocity. The overall performance shows that the mr-DWL material is suitable for direct laser writing systems.

Keywords

Mr-DWL photoresist Maskless lithography Line width Curing Spin coated 

Notes

Acknowledgements

The authors would like to gratefully acknowledge the support provided by Research Section United Arab Emirates University through research grant no. 31 N130.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Mechanical Engineering DepartmentUnited Arab Emirates UniversityAl AinUnited Arab Emirates
  2. 2.Mechanical Design Department, Faculty of Engineering, MatariaHelwan UniversityCairoEgypt
  3. 3.Department of Mechanical EngineeringJordan University of Science and TechnologyIrbidJordan

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