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Maskless Lithography Using Negative Photoresist Material: Impact of UV Laser Intensity on the Cured Line Width

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Abstract

The application of maskless lithography technique on negative photoresist material is investigated in this study. The equipment used in this work is designed and built especially for maskless lithography applications. The UV laser of 405 nm wavelength with 0.85 Numerical Aperture is selected for direct laser writing. All the samples are prepared on a glass substrate. Samples are tested at different UV laser intensities and different stage velocities in order to study the impact on patterned line width. Three cases of spin coated layers of thickness 90 μm, 40 μm, and 28 μm on the substrate are studied. The experimental results show that line width has a generally increasing trend with intensity. However, a decreasing trend was observed for increasing velocity. The overall performance shows that the mr-DWL material is suitable for direct laser writing systems.

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Acknowledgements

The authors would like to gratefully acknowledge the support provided by Research Section United Arab Emirates University through research grant no. 31 N130.

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Authors and Affiliations

  1. Mechanical Engineering Department, United Arab Emirates University, Al Ain, United Arab Emirates

    Mohammed Ziauddin Mohammed & Abdel-Hamid I. Mourad

  2. Mechanical Design Department, Faculty of Engineering, Mataria, Helwan University, Cairo, Egypt

    Abdel-Hamid I. Mourad

  3. Department of Mechanical Engineering, Jordan University of Science and Technology, Irbid, 22110, Jordan

    Saud A. Khashan

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  1. Mohammed Ziauddin Mohammed
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  2. Abdel-Hamid I. Mourad
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  3. Saud A. Khashan
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Correspondence to Abdel-Hamid I. Mourad.

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Mohammed, M.Z., Mourad, AH.I. & Khashan, S.A. Maskless Lithography Using Negative Photoresist Material: Impact of UV Laser Intensity on the Cured Line Width. Lasers Manuf. Mater. Process. 5, 133–142 (2018). https://doi.org/10.1007/s40516-018-0058-2

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  • DOI: https://doi.org/10.1007/s40516-018-0058-2

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