Abstract
This work presents an application of an exact analytical approach to estimate the temperature field of solid-state electronics (SSE). A partial lumped approach in the chip’s height was performed, obtaining a two-dimensional mathematical model. The internal heat generation (HG) regions caused by Joule effect due to internal components were modeled as Gaussian functions, and the classical integral transform technique (CITT) was used to solve the problem. The developed formulation was applied in three illustrative HG layouts for chips. In addition, the finite difference method was also implemented for verification and comparison purposes. The CITT provided fast computing and accurate results with small truncation orders in problems with multiple non-uniform heated regions. Furthermore, the formulation presented in this work may be applied to any SSE internal HGs layout, being a useful tool for thermal assessment of SSEs.
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Abbreviations
- T :
-
Temperature (\(^{\circ}\)C)
- k :
-
Thermal conductivity (W/(m K))
- x, y :
-
Cartesian coordinates (m)
- L, H :
-
SSE x and y dimensions, respectively (m)
- \(T_{f}\) :
-
Temperature of the surrounding air (\(^{\circ }\)C)
- \(T_{o}\) :
-
Reference temperature (\(^{\circ }\)C)
- h :
-
Convection heat transfer coefficient (W/(m\(^2\)K))
- \(N_{n}\) :
-
Normalization integrals
- \(\dot{g}'''\) :
-
Overall heat generation (HG) (W/m\(^3\))
- G :
-
Overall dimensionless HG
- \(G_{e}\) :
-
Total dimensionless intensity of each individual HG region
- erf:
-
Error function
- \(\xi ,\,\eta\) :
-
Dimensionless Cartesian coordinates
- \(\xi _{0},\,\eta _{0}\) :
-
HG center coordinate
- \(\delta\) :
-
SSE z-dimension (m)
- \(\beta\), \(\gamma\) :
-
Aspect ratios
- \(\varPsi\), \(\lambda\) :
-
Eigenfunction and eigenvalue, respectively
- \(\sigma\) :
-
HG dispersion parameter
- \(\varTheta\) :
-
Dimensionless temperature
- RE:
-
Relative error
- \(\epsilon\)-RMS:
-
Root mean square error
- \(\Delta \xi\), \(\Delta \eta\) :
-
FDM distance between nodes in \(\xi\) and \(\eta\) directions, respectively
- \({\mathrm{Bi}}_L\) :
-
Biot number based on L-dimension
- \(\mathrm{Bi}_{\delta }\) :
-
Biot number based on \(\delta\)-dimension
- \(\bar{\, }\) :
-
Integral transform
- n :
-
CITT index
- \(n_{\max }\) :
-
Truncation order for CITT
- i, j :
-
FDM node indexes
- \(i_{\max }\), \(j_{\max }\) :
-
FDM number of nodes in \(\xi\) and \(\eta\) direction, respectively
- k :
-
Index of each individual HG
- \(k_{\max }\) :
-
Total number of individual HGs
- CITT:
-
Related to the CITT
- FDM:
-
Related to the FDM
- CITT-Conv.:
-
Fully converged CITT result
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Acknowledgements
The authors would like to acknowledge the financial support provided by CNPq (Grant 423158/2018-0), FAPERJ (Grant: E-26/202.637/2018) and CAPES, Brazilian agencies for the fostering of science.
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Corrêa, L.M., Chalhub, D.J.N.M. Application of an exact integral transform formulation for temperature estimation in solid-state electronics. J Braz. Soc. Mech. Sci. Eng. 43, 203 (2021). https://doi.org/10.1007/s40430-021-02912-x
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DOI: https://doi.org/10.1007/s40430-021-02912-x