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Electronic Characteristics of Perylene Diimide Anion Radical and Dianion Films by Quantitative Doping

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Abstract

Due to their unique physicochemical properties, the anion radical and dianion of perylene diimide derivatives(PDIs) recently attracted significant attention for organic semiconductors. However, the impact of packing structure and the radical content for carrier transport in the solid state still need to be determined. Bringing the electron-withdrawing groups is an effective strategy for enabling π−π stacking distance. Here, bay-tetrachloro-substituted PDI(B-4Cl-PDI) anion radical and dianion films were fabricated quantitatively doped with N2H4·H2O. The radical contents were quantitatively calculated by absorption spectra in different doping ratios. The X-ray powder diffraction patterns showed that the anion radical presented a crystalline structure, and dianion aggregates exhibited an amorphous structure. With precise manipulation of the radical content, the anion radical aggregates and dianion aggregates showed the maximum electrical conductivity value of 0.024 and 0.0018 S/cm, respectively. The experiment results show that doping level and aggregate structure play a crucial role in electronic transport properties.

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Acknowledgements

This work was supported by the National Key R&D Program of China (No.2020YFA0714604), the National Natural Science Foundation of China (Nos.U20A6002, 91833304, 51521002 22005107, 52203221), the Basic and Applied Basic Research Major Program of Guangdong Province, China(No. 2019B030302007), the Research and Development Funds for Science and Technology Program of Guangzhou, China(No.202007020004), the Natural Science Foundation of Guangdong Province, China(Nos.2019B121205002, 2022A1515010063), the Fund of the Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, China(No.2019B030301003), and the Funding by Science and Technology Projects in Guangzhou, China (Nos.202102020401, 202102020561).

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Authors and Affiliations

  1. Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China

    Yanhua Jia, Qinglin Jiang, Bohan Wang, Jiaji Yang & Yuguang Ma

  2. Department of Physics, South China University of Technology, Guangzhou, 510640, P. R. China

    Jiang Zhang

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  1. Yanhua Jia
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  2. Qinglin Jiang
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  3. Bohan Wang
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  4. Jiaji Yang
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  5. Jiang Zhang
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  6. Yuguang Ma
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Corresponding authors

Correspondence to Qinglin Jiang, Jiang Zhang or Yuguang Ma.

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The authors declare no conflicts of interest.

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Jia, Y., Jiang, Q., Wang, B. et al. Electronic Characteristics of Perylene Diimide Anion Radical and Dianion Films by Quantitative Doping. Chem. Res. Chin. Univ. 39, 187–191 (2023). https://doi.org/10.1007/s40242-023-2350-8

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  • DOI: https://doi.org/10.1007/s40242-023-2350-8

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