Abstract
Graphene-based supercapacitors have attracted tremendous attention owing to their outstanding electro-chemical performance. In terms of material, nitrogen(N)-doped graphene(NDG) displays enhanced specific capaci- tance and rate performance compared with bare graphene used as a supercapacitor electrode. However, it still remains a challenge to develop a facile and simple method of NDG in cost-effective manner. Here, we used a simple direct laser writing technique to accomplish the simultaneous photoreduction and N-doping of graphene oxide(GO) using urea as a N source. The N content of the resultant reduced N-doped graphene oxide(NGO) reached a maximum value of 6.37%. All reduced NGO(NRGO)-based supercapacitors exhibited a higher specific capacitance than those based on pure reduced GO(RGO). Interestingly, the electrochemical performance of NRGO-based supercapacitors varied with different contents of N species. Therefore, we can control the properties of the obtained NRGOs by adjusting the doping ratios, an important step in developing effective graphene-based energy storage devices.
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Supported by the National Basic Research Program of China(No.2017YFB1104300) and the National Natural Science Foundation of China(Nos.61775078, 21603083, 61522503).
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Fu, X., Xu, S., Luo, Y. et al. Simultaneous Photoreduction and Nitrogen Doping of Graphene Oxide for Supercapacitors by Direct Laser Writing. Chem. Res. Chin. Univ. 35, 879–883 (2019). https://doi.org/10.1007/s40242-019-9060-2
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DOI: https://doi.org/10.1007/s40242-019-9060-2