Abstract
CaBi2Nb2O9 thin film capacitors were fabricated on SrRuO3-buffered Pt(111)/Ti/Si(100) substrates by adopting a two-step fabrication process. This process combines a low-temperature sputtering deposition with a rapid thermal annealing (RTA) to inhibit the grain growth, for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis. By using this method, CaBi2Nb2O9 thin films with uniformly distributed nanograins were obtained, which display a large recyclable energy density Wrec ≈ 69 J/cm3 and a high energy efficiency η ≈ 82.4%. A superior fatigue-resistance (negligible energy performance degradation after 109 charge-discharge cycles) and a good thermal stability (from −170 to 150 °C) have also been achieved. This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.
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Acknowledgements
We acknowledge the financial support of the National Natural Science Foundation of China (Grant Nos. 51772175 and 51872166), and the Nano Projects of Suzhou City (Grant No. ZXG201445). J. Ouyang would also like to acknowledge the support from the Seed Funding for Top Talents in Qilu University of Technology (Shandong Academy of Sciences), the International Cooperation Research Project of Qilu University of Technology (Grant No. QLUTGJHZ2018003), and the Independent Innovation Foundation of Shandong University (Grant Nos. 2018JC045 and 2017ZD008).
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Yan, J., Wang, Y., Wang, CM. et al. Boosting energy storage performance of low-temperature sputtered CaBi2Nb2O9 thin film capacitors via rapid thermal annealing. J Adv Ceram 10, 627–635 (2021). https://doi.org/10.1007/s40145-021-0464-3
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DOI: https://doi.org/10.1007/s40145-021-0464-3