|
[4]
|
PbS (QDs with size-tunable infrared bandgaps)
|
Spin-coating blends
|
PCE
|
Simulated AM 1.5G solar radiation
|
|
[5]
|
Poly-(3-hexylthiophene)
|
Low temperatures (< 150 C) + simple spin-coating process
|
High quantum efficiency and high open-circuit voltage
|
ASTM AM 1.5 (Global)
|
|
[6]
|
N719 dye
|
Growing vertically oriented single-crystal anatase
|
Dye-sensitized solar cell performance dye absorbance
|
AM1.5
|
|
[9]
|
Deposited thin films of perovskite semiconductors
|
Annealing (700 °C, 900 °C, 1050 °C)
|
Bandgaps ranging from 1.6 to 2.3 ev
|
–
|
|
Cell efficiency
|
Photoluminescence at room temperature
|
|
[18]
|
Si nanowires
|
Growing epitaxial
|
Light absorption
|
(1 mW, 488 nm) at room temperature
|
|
Wet chemical etching (MACE)
|
Photoluminescence
|
|
[10]
|
Thin-film and wide-bandgap absorber layers
|
Plasma reactive ion etching (ICPRIE) + liquid surface passivation techniques
|
Light trapping
|
400–1100 nm under normal incidence
|
|
Reflectivity
|
|
[11]
|
Single InGaAs/InP
|
Nanolaser-monolithically growth
|
Luminescence yield
|
Room temperature
|
|
[13]
|
Copper indium gallium selenide (Cu(InGa)Se2 and high-refractive-index glass materials
|
LSG
|
Eg
|
AMO and AM1.5 solar spectra
|
|
Conversion efficiency
|
|
Voc, Jsc, FF
|
|
[14]
|
Mono-crystalline silicon solar cell
|
Without coating
|
Open-circuit voltage, Voc; short-circuit current, Isc; maximum voltage, Vmp; maximum current, Imp; maximum power, Pmax; solar cell conversion efficiency; PV module conversion efficiency; and fill factor, FF
|
Pulsed light simulator and at STC (hypothetical and artificial operating conditions can not be simulated in natural sunlight where several micro-climatic parameters along with the temperature simultaneously drive the PV module. A temperature in a natural environment is no longer a single-valued function as in the case of a controlled environment)
|