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Atomically thin PdS2: physical characteristics and electronic device applications

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Abstract

This paper details the fabrication and characterization of field-effect transistors (FETs) and photodetector devices based on few-layered palladium disulfide (PdS2) films. PdS2 is an emerging member of the transition metal dichalcogenide family that has not been extensively studied. In this study, we evaluated various characteristics of PdS2 by fabricating FET devices and measured the contact resistance using the transmission line method to be 114 MΩ \(\bullet\) μm. We evaluated the electron transport properties of the fabricated FETs to confirm their n-type behavior and measured their capacitance–voltage (C–V) curves. The field-effect mobility of the few-layered PdS2 FETs fabricated through transmission line patterning was investigated at room temperature (300 K) and found to be 2.85 cm2 V−1 s−1.

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Acknowledgements

This study was supported by the National Research Foundation of Korea (NRF-2021R1C1C1006147) and Samsung Electronics University R&D program.

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Authors and Affiliations

  1. Department of Electrical Engineering and Smart Grid Research Center, Jeonbuk National University, Jeonju, 54896, South Korea

    Hyeon Seung Jo, Guen Hyung Oh & Tae wan Kim

  2. Department of Materials Science and Engineering, University of Seoul, Seoul, 02504, South Korea

    Sang-il Kim

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  1. Hyeon Seung Jo
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  2. Guen Hyung Oh
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  3. Sang-il Kim
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  4. Tae wan Kim
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Correspondence to Sang-il Kim or Tae wan Kim.

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Jo, H.S., Oh, G.H., Kim, Si. et al. Atomically thin PdS2: physical characteristics and electronic device applications. J. Korean Phys. Soc. 83, 751–755 (2023). https://doi.org/10.1007/s40042-023-00908-5

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